All MOSFET. IPA60R600P6 Datasheet

 

IPA60R600P6 Datasheet and Replacement


   Type Designator: IPA60R600P6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO-220F
 

 IPA60R600P6 substitution

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IPA60R600P6 Datasheet (PDF)

 ..1. Size:2849K  infineon
ipb60r600p6 ipp60r600p6 ipa60r600p6 ipd60r600p6.pdf pdf_icon

IPA60R600P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R600P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPB60R600P6, IPP60R600P6, IPA60R600P6,IPD60R600P6DPAK TO-220 TO-220 FP1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFET

 ..2. Size:2688K  infineon
ipa60r600p6 ipd60r600p6 ipp60r600p6.pdf pdf_icon

IPA60R600P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R600P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPP60R600P6, IPA60R600P6, IPD60R600P6TO-220 TO-220 FP DPAK1 Descriptiontab tabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accor

 ..3. Size:2519K  infineon
ipb60r600p6 ipp60r600p6 ipd60r600p6 ipa60r600p6.pdf pdf_icon

IPA60R600P6

IPB60R600P6, IPP60R600P6, IPD60R600P6,IPA60R600P6MOSFETDPAK PG-TO 220 DPAK600V CoolMOS P6 Power Transistortab tabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and22pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 133experience of the leading SJ MOSFET suppli

 ..4. Size:225K  inchange semiconductor
ipa60r600p6.pdf pdf_icon

IPA60R600P6

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R600P6FEATURESWith TO-220F PackageDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

Datasheet: IPA65R125C7 , IPA65R110CFD , IPA65R099C6 , IPA65R095C7 , IPA65R065C7 , IPA65R045C7 , IPA60R800CE , IPA60R650CE , IRFP260 , IPA60R460CE , IPA60R400CE , IPA60R380P6 , IPA60R330P6 , IPA60R280P6 , IPA60R230P6 , IPA60R190P6 , IPA60R160P6 .

History: OSG70R1K4FF | SLD60R380S2 | IXTA4N150HV

Keywords - IPA60R600P6 MOSFET datasheet

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