IPA60R600P6 Datasheet. Specs and Replacement

Type Designator: IPA60R600P6  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO-220F

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IPA60R600P6 substitution

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IPA60R600P6 datasheet

 ..1. Size:2849K  infineon
ipb60r600p6 ipp60r600p6 ipa60r600p6 ipd60r600p6.pdf pdf_icon

IPA60R600P6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R600P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPB60R600P6, IPP60R600P6, IPA60R600P6, IPD60R600P6 D PAK TO-220 TO-220 FP 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFET... See More ⇒

 ..2. Size:2688K  infineon
ipa60r600p6 ipd60r600p6 ipp60r600p6.pdf pdf_icon

IPA60R600P6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R600P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPP60R600P6, IPA60R600P6, IPD60R600P6 TO-220 TO-220 FP DPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accor... See More ⇒

 ..3. Size:2519K  infineon
ipb60r600p6 ipp60r600p6 ipd60r600p6 ipa60r600p6.pdf pdf_icon

IPA60R600P6

IPB60R600P6, IPP60R600P6, IPD60R600P6, IPA60R600P6 MOSFET D PAK PG-TO 220 DPAK 600V CoolMOS P6 Power Transistor tab tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 2 pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 1 3 3 experience of the leading SJ MOSFET suppli... See More ⇒

 ..4. Size:225K  inchange semiconductor
ipa60r600p6.pdf pdf_icon

IPA60R600P6

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R600P6 FEATURES With TO-220F Package Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒

Detailed specifications: IPA65R125C7, IPA65R110CFD, IPA65R099C6, IPA65R095C7, IPA65R065C7, IPA65R045C7, IPA60R800CE, IPA60R650CE, STP75NF75, IPA60R460CE, IPA60R400CE, IPA60R380P6, IPA60R330P6, IPA60R280P6, IPA60R230P6, IPA60R190P6, IPA60R160P6

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