Справочник MOSFET. IPA60R600P6

 

IPA60R600P6 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPA60R600P6
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 28 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7.3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 28 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
   Тип корпуса: TO-220F
     - подбор MOSFET транзистора по параметрам

 

IPA60R600P6 Datasheet (PDF)

 ..1. Size:2849K  infineon
ipb60r600p6 ipp60r600p6 ipa60r600p6 ipd60r600p6.pdfpdf_icon

IPA60R600P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R600P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPB60R600P6, IPP60R600P6, IPA60R600P6,IPD60R600P6DPAK TO-220 TO-220 FP1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFET

 ..2. Size:2688K  infineon
ipa60r600p6 ipd60r600p6 ipp60r600p6.pdfpdf_icon

IPA60R600P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R600P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPP60R600P6, IPA60R600P6, IPD60R600P6TO-220 TO-220 FP DPAK1 Descriptiontab tabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accor

 ..3. Size:2519K  infineon
ipb60r600p6 ipp60r600p6 ipd60r600p6 ipa60r600p6.pdfpdf_icon

IPA60R600P6

IPB60R600P6, IPP60R600P6, IPD60R600P6,IPA60R600P6MOSFETDPAK PG-TO 220 DPAK600V CoolMOS P6 Power Transistortab tabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and22pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 133experience of the leading SJ MOSFET suppli

 ..4. Size:225K  inchange semiconductor
ipa60r600p6.pdfpdf_icon

IPA60R600P6

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R600P6FEATURESWith TO-220F PackageDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

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History: BSZ0703LS | IXTT360N055T2 | WMK18N50C4 | PSMN7R0-100XS | KHB9D0N50P1 | PJU2NA60H | KRF7401

 

 
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