IPA60R190P6 Datasheet and Replacement
Type Designator: IPA60R190P6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 76 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO-220F
IPA60R190P6 substitution
IPA60R190P6 Datasheet (PDF)
ipa60r190p6 ipp60r190p6 ipw60r190p6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R190P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R190P6, IPP60R190P6, IPA60R190P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi
ipw60r190p6 ipb60r190p6 ipp60r190p6 ipa60r190p6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R190P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R190P6, IPB60R190P6, IPP60R190P6,IPA60R190P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,
ipa60r190p6.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R190P6FEATURESDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.19(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
ipw60r190e6 ipp60r190e6 ipa60r190e6.pdf
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Datasheet: IPA60R650CE , IPA60R600P6 , IPA60R460CE , IPA60R400CE , IPA60R380P6 , IPA60R330P6 , IPA60R280P6 , IPA60R230P6 , K3569 , IPA60R160P6 , IPA60R125P6 , IPA60R099P6 , IPA50R950CE , IPA50R800CE , IPA50R650CE , IPA50R500CE , IPA50R280CE .
Keywords - IPA60R190P6 MOSFET datasheet
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