IRFP9132 Specs and Replacement

Type Designator: IRFP9132

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 140 max nS

Cossⓘ - Output Capacitance: 450 max pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO3P

IRFP9132 substitution

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IRFP9132 datasheet

 8.1. Size:142K  international rectifier
irfp9140n.pdf pdf_icon

IRFP9132

PD - 9.1492A IRFP9140N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175 C Operating Temperature P-Channel RDS(on) = 0.117 Fast Switching G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc... See More ⇒

 8.2. Size:165K  international rectifier
irfp9140.pdf pdf_icon

IRFP9132

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Detailed specifications: IRFP452, IRFP453, IRFP460, IRFP460A, IRFP460LC, IRFP470, IRFP9130, IRFP9131, 5N60, IRFP9133, IRFP9140, IRFP9140N, IRFP9141, IRFP9142, IRFP9143, IRFP9150, IRFP9230

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.