IRFP4110PBF Specs and Replacement

Type Designator: IRFP4110PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 370 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 67 nS

Cossⓘ - Output Capacitance: 670 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO247AC

IRFP4110PBF substitution

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IRFP4110PBF datasheet

 ..1. Size:288K  international rectifier
 irfp4110pbf.pdf pdf_icon

IRFP4110PBF

PD - 97311 IRFP4110PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m l Hard Switched and High Frequency Circuits max. 4.5m ID (Silicon Limited) 180A c ID (Package Limited) 120A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D l ... See More ⇒

 6.1. Size:519K  infineon
 auirfp4110.pdf pdf_icon

IRFP4110PBF

AUTOMOTIVE GRADE AUIRFP4110 HEXFET Power MOSFET Features Advanced Process Technology VDSS 100V D Ultra Low On-Resistance RDS(on) typ. 3.7m Enhanced dV/dT and dI/dT capability 4.5m max 175 C Operating Temperature G ID (Silicon Limited) 180A Fast Switching S Repetitive Avalanche Allowed up to Tjmax ID (Package Lim... See More ⇒

 6.2. Size:728K  cn evvo
 irfp4110.pdf pdf_icon

IRFP4110PBF

IRFP4110 N-Channel Enhancement Mode MOSFET Electrical Characteristics (TC=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics Drain-Sourtce Breakdown Voltage VGS=0V,ID=250 A 100 --- --- V BVDSS Zero Gate Voltage Drain Current VGS=0V, VDS=100V --- --- 1 A IDSS Gate-Source Leakage Current IGSS VGS= 20V, VDS=0A --- --- 100 nA On Chara... See More ⇒

 6.3. Size:243K  inchange semiconductor
 irfp4110.pdf pdf_icon

IRFP4110PBF

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4110 IIRFP4110 FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterr... See More ⇒

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Detailed specifications: IPA105N15N3, IPA083N10N5, IPA075N15N3, IPA060N06N, IPA041N04NG, IPA040N06N, IPA029N06N, IRFP4004PBF, IRFP450, IRFP4127PBF, IRFP4137PBF, IRFP4227PBF, IRFP4228PBF, IRFP4229PBF, IRFP4232PBF, IRFP4242PBF, IRFP4310ZPBF

Keywords - IRFP4110PBF MOSFET specs

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