All MOSFET. IRFP4110PBF Datasheet

 

IRFP4110PBF Datasheet and Replacement


   Type Designator: IRFP4110PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 370 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 670 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO247AC
 

 IRFP4110PBF substitution

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IRFP4110PBF Datasheet (PDF)

 ..1. Size:288K  international rectifier
 irfp4110pbf.pdf pdf_icon

IRFP4110PBF

PD - 97311IRFP4110PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply VDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7m:l Hard Switched and High Frequency Circuitsmax.4.5m:ID (Silicon Limited)180A cID (Package Limited)120ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtRuggednessDl

 6.1. Size:519K  infineon
 auirfp4110.pdf pdf_icon

IRFP4110PBF

AUTOMOTIVE GRADE AUIRFP4110 HEXFET Power MOSFET Features Advanced Process Technology VDSS 100V DUltra Low On-Resistance RDS(on) typ. 3.7mEnhanced dV/dT and dI/dT capability 4.5mmax 175C Operating Temperature GID (Silicon Limited) 180A Fast Switching SRepetitive Avalanche Allowed up to Tjmax ID (Package Lim

 6.2. Size:728K  cn evvo
 irfp4110.pdf pdf_icon

IRFP4110PBF

IRFP4110N-Channel Enhancement Mode MOSFETElectrical Characteristics(TC=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitsOff CharacteristicsDrain-Sourtce Breakdown Voltage VGS=0V,ID=250A 100 --- --- VBVDSSZero Gate Voltage Drain Current VGS=0V, VDS=100V --- --- 1 AIDSSGate-Source Leakage CurrentIGSS VGS=20V, VDS=0A --- --- 100 nAOn Chara

 6.3. Size:243K  inchange semiconductor
 irfp4110.pdf pdf_icon

IRFP4110PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP4110IIRFP4110FEATURESStatic drain-source on-resistance:RDS(on)4.5mEnhancement mode:Vth =2.0 to 4.0 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterr

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Datasheet: IPA105N15N3 , IPA083N10N5 , IPA075N15N3 , IPA060N06N , IPA041N04NG , IPA040N06N , IPA029N06N , IRFP4004PBF , IRFP450 , IRFP4127PBF , IRFP4137PBF , IRFP4227PBF , IRFP4228PBF , IRFP4229PBF , IRFP4232PBF , IRFP4242PBF , IRFP4310ZPBF .

History: FQPF12P20YDTU | NTHD4P02F | NTH4L040N65S3F

Keywords - IRFP4110PBF MOSFET datasheet

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 IRFP4110PBF equivalent finder
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 IRFP4110PBF replacement

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