Справочник MOSFET. IRFP4110PBF

 

IRFP4110PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFP4110PBF
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 370 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 120 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 150 nC
   Время нарастания (tr): 67 ns
   Выходная емкость (Cd): 670 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0045 Ohm
   Тип корпуса: TO247AC

 Аналог (замена) для IRFP4110PBF

 

 

IRFP4110PBF Datasheet (PDF)

 ..1. Size:288K  international rectifier
irfp4110pbf.pdf

IRFP4110PBF IRFP4110PBF

PD - 97311IRFP4110PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply VDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7m:l Hard Switched and High Frequency Circuitsmax.4.5m:ID (Silicon Limited)180A cID (Package Limited)120ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtRuggednessDl

 ..2. Size:288K  infineon
irfp4110pbf.pdf

IRFP4110PBF IRFP4110PBF

PD - 97311IRFP4110PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply VDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7m:l Hard Switched and High Frequency Circuitsmax.4.5m:ID (Silicon Limited)180A cID (Package Limited)120ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtRuggednessDl

 6.1. Size:519K  infineon
auirfp4110.pdf

IRFP4110PBF IRFP4110PBF

AUTOMOTIVE GRADE AUIRFP4110 HEXFET Power MOSFET Features Advanced Process Technology VDSS 100V DUltra Low On-Resistance RDS(on) typ. 3.7mEnhanced dV/dT and dI/dT capability 4.5mmax 175C Operating Temperature GID (Silicon Limited) 180A Fast Switching SRepetitive Avalanche Allowed up to Tjmax ID (Package Lim

 6.2. Size:243K  inchange semiconductor
irfp4110.pdf

IRFP4110PBF IRFP4110PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP4110IIRFP4110FEATURESStatic drain-source on-resistance:RDS(on)4.5mEnhancement mode:Vth =2.0 to 4.0 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterr

 8.1. Size:511K  international rectifier
irfp4127pbf.pdf

IRFP4110PBF IRFP4110PBF

IRFP4127PbF HEXFET Power MOSFET Application High Efficiency Synchronous Rectification in SMPS DVDSS 200V Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 17m Hard Switched and High Frequency Circuits G 21mmax SID 75A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Chara

 8.2. Size:380K  international rectifier
irfp4137pbf.pdf

IRFP4110PBF IRFP4110PBF

IRFP4137PbF HEXFET Power MOSFET Application High Efficiency Synchronous Rectification in SMPS DVDSS 300V Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 56m Hard Switched and High Frequency Circuits G 69mmax SID 38A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Chara

 8.3. Size:511K  infineon
irfp4127pbf.pdf

IRFP4110PBF IRFP4110PBF

IRFP4127PbF HEXFET Power MOSFET Application High Efficiency Synchronous Rectification in SMPS DVDSS 200V Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 17m Hard Switched and High Frequency Circuits G 21mmax SID 75A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Chara

 8.4. Size:383K  infineon
irfp4137pbf.pdf

IRFP4110PBF IRFP4110PBF

IRFP4137PbF HEXFET Power MOSFET Application High Efficiency Synchronous Rectification in SMPS DVDSS 300V Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 56m Hard Switched and High Frequency Circuits G 69mmax SID 38A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Chara

 8.5. Size:242K  inchange semiconductor
irfp4137.pdf

IRFP4110PBF IRFP4110PBF

isc N-Channel MOSFET Transistor IRFP4137IIRFP4137FEATURESStatic drain-source on-resistance:RDS(on)69mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Speed Power SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 300 V

 8.6. Size:242K  inchange semiconductor
irfp4127.pdf

IRFP4110PBF IRFP4110PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP4127IIRFP4127FEATURESStatic drain-source on-resistance:RDS(on)21mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power

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