IRFP4410ZPBF Specs and Replacement
Type Designator: IRFP4410ZPBF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 97 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 52 nS
Cossⓘ - Output Capacitance: 340 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO247AC
IRFP4410ZPBF substitution
- MOSFET ⓘ Cross-Reference Search
IRFP4410ZPBF datasheet
irfp4410zpbf.pdf
PD - 97309A IRFP4410ZPbF HEXFET Power MOSFET Applications VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 7.2m l High Speed Power Switching max. 9.0m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 97A Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Cap... See More ⇒
irfp4410z.pdf
isc N-Channel MOSFET Transistor IRFP4410Z IIRFP4410Z FEATURES Static drain-source on-resistance RDS(on) 9.0m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply... See More ⇒
irfp441r.pdf
isc N-Channel MOSFET Transistor IRFP441R FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies ... See More ⇒
Detailed specifications: IRFP4232PBF, IRFP4242PBF, IRFP4310ZPBF, IRFP4321PBF, IRFP4332PBF, IRFP4368PBF, IRFP440PBF, IRFP440R, 20N50, IRFP441R, IRFP442R, IRFP443R, IRFP4468PBF, IRFP448PBF, IRFP449, IRFP450APBF, IRFP450B
Keywords - IRFP4410ZPBF MOSFET specs
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