All MOSFET. IRFP462 Datasheet

 

IRFP462 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFP462
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 81 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO247

 IRFP462 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP462 Datasheet (PDF)

 ..1. Size:44K  harris semi
irfp462.pdf

IRFP462
IRFP462

IRFP460,S E M I C O N D U C T O RIRFP46220A and 17A, 500V, 0.27 and 0.35 Ohm,January 1998 N-Channel Power MOSFETsFeatures Description 20A and 17A, 500V These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 0.27 and 0.35MOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in t

 ..2. Size:330K  inchange semiconductor
irfp462.pdf

IRFP462
IRFP462

isc N-Channel MOSFET Transistor IRFP462FEATURESDrain Current I = 17A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.35(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 8.1. Size:205K  international rectifier
irfp460lcpbf.pdf

IRFP462
IRFP462

PD - 94902IRFP460LCPbF Lead-Free12/19/03Document Number: 91235 www.vishay.com1IRFP460LCPbFDocument Number: 91235 www.vishay.com2IRFP460LCPbFDocument Number: 91235 www.vishay.com3IRFP460LCPbFDocument Number: 91235 www.vishay.com4IRFP460LCPbFDocument Number: 91235 www.vishay.com5IRFP460LCPbFDocument Number: 91235 www.vishay.com6IRFP460LCPbFDocu

 8.2. Size:873K  international rectifier
irfp460.pdf

IRFP462
IRFP462

PD - 94901IRFP460PbF Lead-Free12/19/03Document Number: 91237 www.vishay.com1IRFP460PbFDocument Number: 91237 www.vishay.com2IRFP460PbFDocument Number: 91237 www.vishay.com3IRFP460PbFDocument Number: 91237 www.vishay.com4IRFP460PbFDocument Number: 91237 www.vishay.com5IRFP460PbFDocument Number: 91237 www.vishay.com6IRFP460PbFTO-247AC Package O

 8.3. Size:154K  international rectifier
irfp460lc.pdf

IRFP462
IRFP462

PD - 9.1232IRFP460LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementEnhanced 30V Vgs Rating VDSS = 500VReduced Ciss, Coss, CrssIsolated Central Mounting HoleRDS(on) = 0.27Dynamic dv/dt RatedRepetitive Avalanche RatedID = 20ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional

 8.4. Size:206K  international rectifier
irfp460apbf.pdf

IRFP462
IRFP462

PD- 94853SMPS MOSFETIRFP460APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 500V 0.27 20Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanc

 8.5. Size:115K  international rectifier
irfp460as.pdf

IRFP462
IRFP462

PD-94011ASMPS MOSFETIRFP460ASHEXFET Power MOSFETApplications SMPS, UPS, Welding and High SpeedVDSS Rds(on) max IDPower Switching500V 0.27 20ABenefits Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Solder plated and leadformed for surface mountingDescriptionThird

 8.6. Size:94K  international rectifier
irfp460n.pdf

IRFP462
IRFP462

PD-94098SMPS MOSFETIRFP460NHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.24 20A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Current

 8.7. Size:161K  international rectifier
irfp460npbf.pdf

IRFP462
IRFP462

PD-94809SMPS MOSFETIRFP460NPbFHEXFET Power MOSFETApplications Switch Mode Power Supply ( SMPS )VDSS Rds(on) max ID Uninterruptable Power Supply500V 0.24 20A High speed power switching Switch Mode Power Supply ( SMPS ) Lead-FreeBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Character

 8.8. Size:154K  international rectifier
irfp460p.pdf

IRFP462
IRFP462

PD-93946AIRFP460P Dynamic dv/dt RatingHEXFET Power MOSFET Repetitive Avalanche RatedD Isolated Central Mounting HoleVDSS = 500V Fast Switching Ease of Paralleling Simple Drive Requirements RDS(on) = 0.27G Solder Plated for ReflowingID = 20ADescriptionSThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of f

 8.9. Size:287K  international rectifier
irfp4668pbf.pdf

IRFP462
IRFP462

PD -97140IRFP4668PbFHEXFET Power MOSFETApplicationsDVDSS200Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ.8.0m:l High Speed Power Switchingl Hard Switched and High Frequency CircuitsGmax. 9.7m:ID 130ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessDl Fully Characterized Capacitance an

 8.10. Size:95K  international rectifier
irfp460a.pdf

IRFP462
IRFP462

PD- 91880SMPS MOSFETIRFP460AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.27 20A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Current

 8.11. Size:91K  st
irfp460.pdf

IRFP462
IRFP462

IRFP460 N - CHANNEL 500V - 0.22 - 20 A - TO-247PowerMESH MOSFETTYPE VDSS RDS(on) IDIRFP460 500 V

 8.12. Size:770K  fairchild semi
irfp460c.pdf

IRFP462
IRFP462

February 2002IRFP460C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 20A, 500V, RDS(on) = 0.24 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 130nC)planar stripe, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to

 8.13. Size:159K  vishay
irfp460 sihfp460.pdf

IRFP462
IRFP462

IRFP460, SiHFP460Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 29Qgd (nC) 110 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Le

 8.14. Size:158K  vishay
irfp460n irfp460npbf irfp460n sihfp460n sihfp460n.pdf

IRFP462
IRFP462

IRFP460N, SiHFP460NVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 124 COMPLIANTRuggednessQgs (nC) 40 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 57Configura

 8.15. Size:183K  vishay
irfp460b sihg460b.pdf

IRFP462
IRFP462

IRFP460B, SiHG460Bwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.25- Low Input Capacitance (Ciss)Qg max. (nC) 170- Reduced Capacitive Switching LossesQgs (nC) 14- High Body Diode RuggednessQgd (nC) 28- Avalanche Energy Rate

 8.16. Size:180K  vishay
irfp460a sihfp460a.pdf

IRFP462
IRFP462

IRFP460A, SiHFP460AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.27 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 105 COMPLIANTRuggednessQgs (nC) 26 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 42 and CurrentConfigurat

 8.17. Size:1124K  vishay
irfp460lc sihfp460lc.pdf

IRFP462
IRFP462

IRFP460LC, SiHFP460LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.27 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 120COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 32 Isolated Central Mounting HoleQgd (nC) 49 Dynamic dV/dt RatingConfiguratio

 8.18. Size:156K  vishay
irfp460pbf irfp460 sihfp460.pdf

IRFP462
IRFP462

IRFP460, SiHFP460Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 29Qgd (nC) 110 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Le

 8.19. Size:172K  infineon
irfp460p.pdf

IRFP462
IRFP462

PD-93946AIRFP460P Dynamic dv/dt RatingHEXFET Power MOSFET Repetitive Avalanche RatedD Isolated Central Mounting HoleVDSS = 500V Fast Switching Ease of Paralleling Simple Drive Requirements RDS(on) = 0.27G Solder Plated for ReflowingID = 20ADescriptionSThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of f

 8.20. Size:1133K  infineon
irfp460lc sihfp460lc.pdf

IRFP462
IRFP462

IRFP460LC, SiHFP460LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.27 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 120COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 32 Isolated Central Mounting HoleQgd (nC) 49 Dynamic dV/dt RatingConfiguratio

 8.21. Size:287K  infineon
irfp4668pbf.pdf

IRFP462
IRFP462

PD -97140IRFP4668PbFHEXFET Power MOSFETApplicationsDVDSS200Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ.8.0m:l High Speed Power Switchingl Hard Switched and High Frequency CircuitsGmax. 9.7m:ID 130ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessDl Fully Characterized Capacitance an

 8.22. Size:77K  ixys
irfp460.pdf

IRFP462
IRFP462

MegaMOSTM IRFP 460 VDSS = 500 VPower MOSFET ID(cont) = 20 ARDS(on) = 0.27N-Channel Enhancement Mode, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C20 AG = Gate, D = Drain,IDM TC = 25C, pulse wi

 8.23. Size:1838K  cn vbsemi
irfp460pbf.pdf

IRFP462
IRFP462

IRFP460PBFwww.VBsemi.twN-Channel 500V(D-S) Super Junction Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.080 Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 350RuggednessQgs (nC) 85 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 180and Current

 8.24. Size:375K  inchange semiconductor
irfp460b.pdf

IRFP462
IRFP462

isc N-Channel MOSFET Transistor IRFP460BFEATURESDrain Current I =20A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.25(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 8.25. Size:234K  inchange semiconductor
irfp460.pdf

IRFP462
IRFP462

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP460FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.27(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies a

 8.26. Size:212K  inchange semiconductor
irfp460apbf.pdf

IRFP462
IRFP462

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP460APBFFEATURESWith TO-247 packagingUninterruptible power supplyHigh speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

 8.27. Size:243K  inchange semiconductor
irfp4668.pdf

IRFP462
IRFP462

isc N-Channel MOSFET Transistor IRFP4668IIRFP4668FEATURESStatic drain-source on-resistance:RDS(on)9.7mEnhancement mode:Vth =3.0 to 5.0 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power Supply

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top