IRFP462 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFP462
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 17 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 81 nS
Cossⓘ - Output Capacitance: 480 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TO247
IRFP462 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFP462 Datasheet (PDF)
irfp462.pdf
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IRFP460,S E M I C O N D U C T O RIRFP46220A and 17A, 500V, 0.27 and 0.35 Ohm,January 1998 N-Channel Power MOSFETsFeatures Description 20A and 17A, 500V These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 0.27 and 0.35MOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in t
irfp462.pdf
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isc N-Channel MOSFET Transistor IRFP462FEATURESDrain Current I = 17A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.35(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
irfp460lcpbf.pdf
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PD - 94902IRFP460LCPbF Lead-Free12/19/03Document Number: 91235 www.vishay.com1IRFP460LCPbFDocument Number: 91235 www.vishay.com2IRFP460LCPbFDocument Number: 91235 www.vishay.com3IRFP460LCPbFDocument Number: 91235 www.vishay.com4IRFP460LCPbFDocument Number: 91235 www.vishay.com5IRFP460LCPbFDocument Number: 91235 www.vishay.com6IRFP460LCPbFDocu
irfp460.pdf
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PD - 94901IRFP460PbF Lead-Free12/19/03Document Number: 91237 www.vishay.com1IRFP460PbFDocument Number: 91237 www.vishay.com2IRFP460PbFDocument Number: 91237 www.vishay.com3IRFP460PbFDocument Number: 91237 www.vishay.com4IRFP460PbFDocument Number: 91237 www.vishay.com5IRFP460PbFDocument Number: 91237 www.vishay.com6IRFP460PbFTO-247AC Package O
irfp460lc.pdf
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PD - 9.1232IRFP460LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementEnhanced 30V Vgs Rating VDSS = 500VReduced Ciss, Coss, CrssIsolated Central Mounting HoleRDS(on) = 0.27Dynamic dv/dt RatedRepetitive Avalanche RatedID = 20ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional
irfp460apbf.pdf
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PD- 94853SMPS MOSFETIRFP460APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 500V 0.27 20Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanc
irfp460as.pdf
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PD-94011ASMPS MOSFETIRFP460ASHEXFET Power MOSFETApplications SMPS, UPS, Welding and High SpeedVDSS Rds(on) max IDPower Switching500V 0.27 20ABenefits Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Solder plated and leadformed for surface mountingDescriptionThird
irfp460n.pdf
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PD-94098SMPS MOSFETIRFP460NHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.24 20A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Current
irfp460npbf.pdf
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PD-94809SMPS MOSFETIRFP460NPbFHEXFET Power MOSFETApplications Switch Mode Power Supply ( SMPS )VDSS Rds(on) max ID Uninterruptable Power Supply500V 0.24 20A High speed power switching Switch Mode Power Supply ( SMPS ) Lead-FreeBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Character
irfp460p.pdf
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PD-93946AIRFP460P Dynamic dv/dt RatingHEXFET Power MOSFET Repetitive Avalanche RatedD Isolated Central Mounting HoleVDSS = 500V Fast Switching Ease of Paralleling Simple Drive Requirements RDS(on) = 0.27G Solder Plated for ReflowingID = 20ADescriptionSThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of f
irfp4668pbf.pdf
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PD -97140IRFP4668PbFHEXFET Power MOSFETApplicationsDVDSS200Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ.8.0m:l High Speed Power Switchingl Hard Switched and High Frequency CircuitsGmax. 9.7m:ID 130ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessDl Fully Characterized Capacitance an
irfp460a.pdf
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PD- 91880SMPS MOSFETIRFP460AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.27 20A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Current
irfp460.pdf
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IRFP460 N - CHANNEL 500V - 0.22 - 20 A - TO-247PowerMESH MOSFETTYPE VDSS RDS(on) IDIRFP460 500 V
irfp460c.pdf
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February 2002IRFP460C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 20A, 500V, RDS(on) = 0.24 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 130nC)planar stripe, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to
irfp460 sihfp460.pdf
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IRFP460, SiHFP460Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 29Qgd (nC) 110 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Le
irfp460n irfp460npbf irfp460n sihfp460n sihfp460n.pdf
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IRFP460N, SiHFP460NVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 124 COMPLIANTRuggednessQgs (nC) 40 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 57Configura
irfp460b sihg460b.pdf
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IRFP460B, SiHG460Bwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.25- Low Input Capacitance (Ciss)Qg max. (nC) 170- Reduced Capacitive Switching LossesQgs (nC) 14- High Body Diode RuggednessQgd (nC) 28- Avalanche Energy Rate
irfp460a sihfp460a.pdf
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IRFP460A, SiHFP460AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.27 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 105 COMPLIANTRuggednessQgs (nC) 26 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 42 and CurrentConfigurat
irfp460lc sihfp460lc.pdf
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IRFP460LC, SiHFP460LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.27 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 120COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 32 Isolated Central Mounting HoleQgd (nC) 49 Dynamic dV/dt RatingConfiguratio
irfp460pbf irfp460 sihfp460.pdf
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IRFP460, SiHFP460Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 29Qgd (nC) 110 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Le
irfp460p.pdf
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PD-93946AIRFP460P Dynamic dv/dt RatingHEXFET Power MOSFET Repetitive Avalanche RatedD Isolated Central Mounting HoleVDSS = 500V Fast Switching Ease of Paralleling Simple Drive Requirements RDS(on) = 0.27G Solder Plated for ReflowingID = 20ADescriptionSThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of f
irfp460lc sihfp460lc.pdf
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IRFP460LC, SiHFP460LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.27 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 120COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 32 Isolated Central Mounting HoleQgd (nC) 49 Dynamic dV/dt RatingConfiguratio
irfp4668pbf.pdf
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PD -97140IRFP4668PbFHEXFET Power MOSFETApplicationsDVDSS200Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ.8.0m:l High Speed Power Switchingl Hard Switched and High Frequency CircuitsGmax. 9.7m:ID 130ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessDl Fully Characterized Capacitance an
irfp460.pdf
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MegaMOSTM IRFP 460 VDSS = 500 VPower MOSFET ID(cont) = 20 ARDS(on) = 0.27N-Channel Enhancement Mode, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C20 AG = Gate, D = Drain,IDM TC = 25C, pulse wi
irfp460pbf.pdf
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IRFP460PBFwww.VBsemi.twN-Channel 500V(D-S) Super Junction Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.080 Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 350RuggednessQgs (nC) 85 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 180and Current
irfp460b.pdf
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isc N-Channel MOSFET Transistor IRFP460BFEATURESDrain Current I =20A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.25(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
irfp460.pdf
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP460FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.27(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies a
irfp460apbf.pdf
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP460APBFFEATURESWith TO-247 packagingUninterruptible power supplyHigh speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So
irfp4668.pdf
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isc N-Channel MOSFET Transistor IRFP4668IIRFP4668FEATURESStatic drain-source on-resistance:RDS(on)9.7mEnhancement mode:Vth =3.0 to 5.0 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power Supply
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SLF65R420S2 | SSF70R450S