All MOSFET. IRFP462 Datasheet

 

IRFP462 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP462

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 250 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 17 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 81 nS

Drain-Source Capacitance (Cd): 480 pF

Maximum Drain-Source On-State Resistance (Rds): 0.35 Ohm

Package: TO247

IRFP462 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP462 Datasheet (PDF)

1.1. irfp462.pdf Size:44K _upd-mosfet

IRFP462
IRFP462

IRFP460, S E M I C O N D U C T O R IRFP462 20A and 17A, 500V, 0.27 and 0.35 Ohm, January 1998 N-Channel Power MOSFETs Features Description • 20A and 17A, 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power • rDS(ON) = 0.27Ω and 0.35Ω MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in t

4.1. irfp460n irfp460npbf.pdf Size:158K _upd-mosfet

IRFP462
IRFP462

IRFP460N, SiHFP460N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (Ω)VGS = 10 V 0.24 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 124 COMPLIANT Ruggedness Qgs (nC) 40 • Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 57 Configura

4.2. irfp460b.pdf Size:183K _upd-mosfet

IRFP462
IRFP462

IRFP460B, SiHG460B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 °C () VGS = 10 V 0.25 - Low Input Capacitance (Ciss) Qg max. (nC) 170 - Reduced Capacitive Switching Losses Qgs (nC) 14 - High Body Diode Ruggedness Qgd (nC) 28 - Avalanche Energy Rate

 4.3. irfp460pbf.pdf Size:156K _upd-mosfet

IRFP462
IRFP462

IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.27 RoHS* • Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT • Fast Switching Qgs (nC) 29 Qgd (nC) 110 • Ease of Paralleling Configuration Single • Simple Drive Requirements D • Le

4.4. irfp4668pbf.pdf Size:287K _upd-mosfet

IRFP462
IRFP462

PD -97140 IRFP4668PbF HEXFET® Power MOSFET Applications D VDSS 200V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 8.0m : l High Speed Power Switching l Hard Switched and High Frequency Circuits G max. 9.7m : ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D l Fully Characterized Capacitance an

 4.5. irfp460p.pdf Size:154K _upd-mosfet

IRFP462
IRFP462

PD-93946A IRFP460P Dynamic dv/dt Rating HEXFET® Power MOSFET Repetitive Avalanche Rated D Isolated Central Mounting Hole VDSS = 500V Fast Switching Ease of Paralleling Simple Drive Requirements RDS(on) = 0.27Ω G Solder Plated for Reflowing ID = 20A Description S Third Generation HEXFET®s from International Rectifier provide the designer with the best combination of f

4.6. irfp460.pdf Size:91K _st

IRFP462
IRFP462

IRFP460 ? N - CHANNEL 500V - 0.22 ? - 20 A - TO-247 PowerMESH? MOSFET TYPE VDSS RDS(on) ID IRFP460 500 V < 0.27 ? 20 A TYPICAL R = 0.22 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION 3 2 This power MOSFET is designed using the 1 companys consolidated strip layout-based MESH TO-247 OVERLAY proc

4.7. irfp460c.pdf Size:770K _fairchild_semi

IRFP462
IRFP462

February 2002 IRFP460C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 20A, 500V, RDS(on) = 0.24? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 130nC) planar stripe, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailored to Fast switching

4.8. irfp460n.pdf Size:94K _international_rectifier

IRFP462
IRFP462

PD-94098 SMPS MOSFET IRFP460N HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.24? 20A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current TO-24

4.9. irfp460.pdf Size:873K _international_rectifier

IRFP462
IRFP462

PD - 94901 IRFP460PbF Lead-Free 12/19/03 Document Number: 91237 www.vishay.com 1 IRFP460PbF Document Number: 91237 www.vishay.com 2 IRFP460PbF Document Number: 91237 www.vishay.com 3 IRFP460PbF Document Number: 91237 www.vishay.com 4 IRFP460PbF Document Number: 91237 www.vishay.com 5 IRFP460PbF Document Number: 91237 www.vishay.com 6 IRFP460PbF TO-247AC Package Outlin

4.10. irfp460apbf.pdf Size:206K _international_rectifier

IRFP462
IRFP462

PD- 94853 SMPS MOSFET IRFP460APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.27? 20A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Vol

4.11. irfp460lcpbf.pdf Size:205K _international_rectifier

IRFP462
IRFP462

PD - 94902 IRFP460LCPbF Lead-Free 12/19/03 Document Number: 91235 www.vishay.com 1 IRFP460LCPbF Document Number: 91235 www.vishay.com 2 IRFP460LCPbF Document Number: 91235 www.vishay.com 3 IRFP460LCPbF Document Number: 91235 www.vishay.com 4 IRFP460LCPbF Document Number: 91235 www.vishay.com 5 IRFP460LCPbF Document Number: 91235 www.vishay.com 6 IRFP460LCPbF Document

4.12. irfp460lc.pdf Size:154K _international_rectifier

IRFP462
IRFP462

PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 500V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.27? Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 20A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFE

4.13. irfp460as.pdf Size:115K _international_rectifier

IRFP462
IRFP462

PD-94011A SMPS MOSFET IRFP460AS HEXFET Power MOSFET Applications SMPS, UPS, Welding and High Speed VDSS Rds(on) max ID Power Switching 500V 0.27? 20A Benefits Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Solder plated and leadformed for surface mounting Description Third Genera

4.14. irfp460a.pdf Size:95K _international_rectifier

IRFP462
IRFP462

PD- 91880 SMPS MOSFET IRFP460A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.27? 20A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current G D

4.15. irfp460p.pdf Size:174K _international_rectifier

IRFP462
IRFP462

PD-93946A IRFP460P Dynamic dv/dt Rating HEXFET Power MOSFET Repetitive Avalanche Rated D Isolated Central Mounting Hole VDSS = 500V Fast Switching Ease of Paralleling Simple Drive Requirements RDS(on) = 0.27? G Solder Plated for Reflowing ID = 20A Description S Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast sw

4.16. irfp460npbf.pdf Size:161K _international_rectifier

IRFP462
IRFP462

PD-94809 SMPS MOSFET IRFP460NPbF HEXFET Power MOSFET Applications Switch Mode Power Supply ( SMPS ) VDSS Rds(on) max ID Uninterruptable Power Supply 500V 0.24? 20A High speed power switching Switch Mode Power Supply ( SMPS ) Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized C

4.17. irfp460a sihfp460a.pdf Size:180K _vishay

IRFP462
IRFP462

IRFP460A, SiHFP460A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (?)VGS = 10 V 0.27 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 105 COMPLIANT Ruggedness Qgs (nC) 26 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 42 and Current Configuration Single

4.18. irfp460n sihfp460n.pdf Size:158K _vishay

IRFP462
IRFP462

IRFP460N, SiHFP460N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (?)VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 124 COMPLIANT Ruggedness Qgs (nC) 40 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 57 Configuration Singl

4.19. irfp460 sihfp460.pdf Size:156K _vishay

IRFP462
IRFP462

IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.27 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 29 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements D Lead (Pb)-free Avail

4.20. irfp460lc sihfp460lc.pdf Size:1124K _vishay

IRFP462
IRFP462

IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) (?)VGS = 10 V 0.27 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 120 COMPLIANT Reduced Ciss, Coss, Crss Qgs (nC) 32 Isolated Central Mounting Hole Qgd (nC) 49 Dynamic dV/dt Rating Configuration Single Repe

4.21. irfp460.pdf Size:77K _ixys

IRFP462
IRFP462

MegaMOSTM IRFP 460 VDSS = 500 V Power MOSFET ID(cont) = 20 A ? RDS(on) = 0.27? ? ? ? N-Channel Enhancement Mode, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25C20 A G = Gate, D = Drain, IDM TC = 25C, pulse width limited by TJM 80 A

Datasheet: IRFP460APBF , IRFP460B , IRFP460C , IRFP460LCPBF , IRFP460N , IRFP460NPBF , IRFP460P , IRFP460PBF , 2SK3562 , IRFP4668PBF , IRFP4710PBF , IRFP4768PBF , IRFP4868PBF , IRFP7430PBF , IRFP7530PBF , IRFP7537PBF , IRFP7718PBF .

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