All MOSFET. IRFP7430PBF Datasheet

 

IRFP7430PBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFP7430PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 366 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 195 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 300 nC
   trⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 2130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0013 Ohm
   Package: TO247AC

 IRFP7430PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP7430PBF Datasheet (PDF)

 ..1. Size:257K  international rectifier
 irfp7430pbf.pdf

IRFP7430PBF IRFP7430PBF

StrongIRFETTMIRFP7430PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsl BLDC Motor drive applicationsDVDSS 40Vl Battery powered circuitsRDS(on) typ. 1.0ml Half-bridge and full-bridge topologies max. 1.3ml Synchronous rectifier applicationsGl Resonant mode power suppliesID (Silicon Limited) 404Al OR-ing and redundant power switchesSID

 ..2. Size:257K  infineon
 irfp7430pbf.pdf

IRFP7430PBF IRFP7430PBF

StrongIRFETTMIRFP7430PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsl BLDC Motor drive applicationsDVDSS 40Vl Battery powered circuitsRDS(on) typ. 1.0ml Half-bridge and full-bridge topologies max. 1.3ml Synchronous rectifier applicationsGl Resonant mode power suppliesID (Silicon Limited) 404Al OR-ing and redundant power switchesSID

 9.1. Size:540K  international rectifier
 irfp7530pbf.pdf

IRFP7430PBF IRFP7430PBF

StrongIRFET IRFP7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00mG Synchronous rectifier applications ID (Silicon Limited) 281A Resonant mode power sup

 9.2. Size:555K  international rectifier
 irfp7718pbf.pdf

IRFP7430PBF IRFP7430PBF

StrongIRFET IRFP7718PbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications VDSS 75V DBattery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 1.45m Synchronous rectifier applications 1.80mG max Resonant mode power supplies ID (Silicon Limited)

 9.3. Size:538K  international rectifier
 irfp7537pbf.pdf

IRFP7430PBF IRFP7430PBF

StrongIRFET IRFP7537PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.75m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.30m Resonant mode power supplies S OR-ing and re

 9.4. Size:540K  infineon
 irfp7530pbf.pdf

IRFP7430PBF IRFP7430PBF

StrongIRFET IRFP7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00mG Synchronous rectifier applications ID (Silicon Limited) 281A Resonant mode power sup

 9.5. Size:538K  infineon
 irfp7537pbf.pdf

IRFP7430PBF IRFP7430PBF

StrongIRFET IRFP7537PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.75m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.30m Resonant mode power supplies S OR-ing and re

 9.6. Size:247K  inchange semiconductor
 irfp7537.pdf

IRFP7430PBF IRFP7430PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP7537IIRFP7537FEATURESStatic drain-source on-resistance:RDS(on)3.3mEnhancement mode:Vth =2.1 to 3.7 V (VDS=VGS, ID=150A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous RectificationABSOLUTE MAXIMUM RATINGS(T =25

 9.7. Size:242K  inchange semiconductor
 irfp7530.pdf

IRFP7430PBF IRFP7430PBF

isc N-Channel MOSFET Transistor IRFP7530IIRFP7530FEATURESStatic drain-source on-resistance:RDS(on) 2mEnhancement mode:Vth =2.1 to 3.7V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous RectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

 9.8. Size:242K  inchange semiconductor
 irfp7718.pdf

IRFP7430PBF IRFP7430PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP7718IIRFP7718FEATURESStatic drain-source on-resistance:RDS(on)1.8mEnhancement mode:Vth =2.0 to 4.0 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous RectificationABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top