FCA16N60F109 Specs and Replacement

Type Designator: FCA16N60F109

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 167 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 960 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm

Package: TO-3PN

FCA16N60F109 substitution

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FCA16N60F109 datasheet

 6.1. Size:518K  fairchild semi
 fca16n60n.pdf pdf_icon

FCA16N60F109

August 2009 SupreMOSTM FCA16N60N N-Channel MOSFET 600V, 16A, 0.170 Features Description RDS(on) = 0.17 ( Typ.)@ VGS = 10V, ID = 8A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 40.2nC) process that differentiates it from preceding multi-epi based technologies. By... See More ⇒

 6.2. Size:987K  fairchild semi
 fca16n60 fca16n60 f109.pdf pdf_icon

FCA16N60F109

December 2008 TM SuperFET FCA16N60 / FCA16N60_F109 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.22 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate charge perfor... See More ⇒

Detailed specifications: IRFP4710PBF, IRFP4768PBF, IRFP4868PBF, IRFP7430PBF, IRFP7530PBF, IRFP7537PBF, IRFP7718PBF, FCA16N60, 20N60, FCA20N60FS, FCA20N60S, FCA20N60SF109, FCAB2126, FCB110N65F, FCB11N60FTM, FCB11N60TM, FCB20N60FTM

Keywords - FCA16N60F109 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.