All MOSFET. FCA16N60F109 Datasheet

 

FCA16N60F109 Datasheet and Replacement


   Type Designator: FCA16N60F109
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 960 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: TO-3PN
 

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FCA16N60F109 Datasheet (PDF)

 6.1. Size:518K  fairchild semi
 fca16n60n.pdf pdf_icon

FCA16N60F109

August 2009SupreMOSTMFCA16N60N N-Channel MOSFET600V, 16A, 0.170Features Description RDS(on) = 0.17 ( Typ.)@ VGS = 10V, ID = 8A The SupreMOS MOSFET, Fairchilds next generation of highvoltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 40.2nC)process that differentiates it from preceding multi-epi basedtechnologies. By

 6.2. Size:987K  fairchild semi
 fca16n60 fca16n60 f109.pdf pdf_icon

FCA16N60F109

December 2008 TMSuperFETFCA16N60 / FCA16N60_F109600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.22balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate charge perfor

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History: AOTF454L

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