FCAB2126 Datasheet and Replacement
Type Designator: FCAB2126
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.3 nS
Cossⓘ - Output Capacitance: 770 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00265 Ohm
Package: TCSP
FCAB2126 substitution
FCAB2126 Datasheet (PDF)
fcab2126.pdf

Doc No. TT4-EA-15014Revision. 1Product StandardsMOS FETFCAB21260LFCAB21260LGate resistor installed Dual N-channel MOS FETUnit: mmFor lithium-ion secondary battery protection circuits3.546 5 4 Features Low source-source ON resistance:Rss(on) typ. = 2.0 mWVGS = 4.5 V) CSP(Chip Size Package) 1 2 3 RoHS compliant (EU RoHS / MSL:Level 1 compliant)(R0.125)
fcab21490l1.pdf

Doc No. TT4-ZZ-02013 Revision. 1Product StandardsMOS FETFCAB21490L1FCAB21490L1Gate resistor installed Dual N-channel MOS FETUnit: mm For lithium-ion secondary battery protection circuits Features Source-source ON resistance:RSS(on) typ. = 2.2 mVGS = 3.8 V) CSP(Chip Size Package) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1) Ma
fcab21520l1.pdf

Doc No. TT4-ZZ-02014 Revision. 1Product StandardsMOS FETFCAB21520L1FCAB21520L1Gate resistor installed Dual N-channel MOS FETUnit: mm For lithium-ion secondary battery protection circuits Features Source-source ON resistance:RSS(on) typ. = 1.6 mVGS = 3.8 V) CSP(Chip Size Package) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1) Ma
Datasheet: IRFP7530PBF , IRFP7537PBF , IRFP7718PBF , FCA16N60 , FCA16N60F109 , FCA20N60FS , FCA20N60S , FCA20N60SF109 , IRF640 , FCB110N65F , FCB11N60FTM , FCB11N60TM , FCB20N60FTM , FCB20N60TM , FCB290N80 , FCB36N60NTM , FCD2250N80Z .
History: IXFK30N50Q
Keywords - FCAB2126 MOSFET datasheet
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History: IXFK30N50Q



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