FCAB2126 MOSFET. Datasheet pdf. Equivalent
Type Designator: FCAB2126
Marking Code: 3E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.1 W
Maximum Drain-Source Voltage |Vds|: 12 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.4 V
Maximum Drain Current |Id|: 12 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 3.3 nS
Drain-Source Capacitance (Cd): 770 pF
Maximum Drain-Source On-State Resistance (Rds): 0.00265 Ohm
Package: TCSP
FCAB2126 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FCAB2126 Datasheet (PDF)
0.1. fcab2126.pdf 
Size:615K _panasonic
Doc No. TT4-EA-15014 Revision. 1 Product Standards MOS FET FCAB21260L FCAB21260L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 3.54 6 5 4 Features Low source-source ON resistance:Rss(on) typ. = 2.0 mW（VGS = 4.5 V) CSP(Chip Size Package) 1 2 3 RoHS compliant (EU RoHS / MSL:Level 1 compliant) (R0.125)
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