All MOSFET. FCAB2126 Datasheet

 

FCAB2126 MOSFET. Datasheet pdf. Equivalent

Type Designator: FCAB2126

Marking Code: 3E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.1 W

Maximum Drain-Source Voltage |Vds|: 12 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.4 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 3.3 nS

Drain-Source Capacitance (Cd): 770 pF

Maximum Drain-Source On-State Resistance (Rds): 0.00265 Ohm

Package: TCSP

FCAB2126 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCAB2126 Datasheet (PDF)

0.1. fcab2126.pdf Size:615K _panasonic

FCAB2126
FCAB2126

Doc No. TT4-EA-15014 Revision. 1 Product Standards MOS FET FCAB21260L FCAB21260L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 3.54 6 5 4  Features  Low source-source ON resistance:Rss(on) typ. = 2.0 mW(VGS = 4.5 V)  CSP(Chip Size Package) 1 2 3  RoHS compliant (EU RoHS / MSL:Level 1 compliant) (R0.125)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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