FCAB2126 MOSFET. Datasheet pdf. Equivalent

   Type Designator: FCAB2126
   Marking Code: 3E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 49 nC
   trⓘ - Rise Time: 3.3 nS
   Cossⓘ - Output Capacitance: 770 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00265 Ohm
   Package: TCSP

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