FCB110N65F MOSFET Datasheet: N-Ch, 650V, 35A. Full specification with pinout and replacement list

FCB110N65F Specs and Replacement

Type Designator: FCB110N65F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 357 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: D2-PAK

FCB110N65F substitution

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FCB110N65F datasheet

..1. Size:695K fairchild semi
fcb110n65f.pdf pdf_icon

April 2015 FCB110N65F N-Channel SuperFET II FRFET MOSFET 650 V, 35 A, 110 m Features Description 700 V @TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 96 m (Typ.) charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 98 nC... See More ⇒

..2. Size:803K onsemi
fcb110n65f.pdf pdf_icon

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

..3. Size:254K inchange semiconductor
fcb110n65f.pdf pdf_icon

isc N-Channel MOSFET Transistor FCB110N65F FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 110m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu... See More ⇒

9.1. Size:971K fairchild semi
fcb11n60tm.pdf pdf_icon

July 2005 TM SuperFET FCB11N60 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Farichild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 40nC) lower gate charge performance. Low... See More ⇒