FCB110N65F. Аналоги и основные параметры

Наименование производителя: FCB110N65F

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 357 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 35 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 21 ns

Cossⓘ - Выходная емкость: 110 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm

Тип корпуса: D2-PAK

Аналог (замена) для FCB110N65F

- подборⓘ MOSFET транзистора по параметрам

 

FCB110N65F даташит

 ..1. Size:695K  fairchild semi
 fcb110n65f.pdf pdf_icon

FCB110N65F

April 2015 FCB110N65F N-Channel SuperFET II FRFET MOSFET 650 V, 35 A, 110 m Features Description 700 V @TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 96 m (Typ.) charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 98 nC

 ..2. Size:803K  onsemi
 fcb110n65f.pdf pdf_icon

FCB110N65F

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:254K  inchange semiconductor
 fcb110n65f.pdf pdf_icon

FCB110N65F

isc N-Channel MOSFET Transistor FCB110N65F FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 110m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

 9.1. Size:971K  fairchild semi
 fcb11n60tm.pdf pdf_icon

FCB110N65F

July 2005 TM SuperFET FCB11N60 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Farichild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 40nC) lower gate charge performance. Low

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