All MOSFET. FCB36N60NTM Datasheet

 

FCB36N60NTM MOSFET. Datasheet pdf. Equivalent


   Type Designator: FCB36N60NTM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 112 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 149 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: D2-PAK

 FCB36N60NTM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCB36N60NTM Datasheet (PDF)

 ..1. Size:355K  fairchild semi
 fcb36n60n fcb36n60ntm.pdf

FCB36N60NTM FCB36N60NTM

September 2010SupreMOSTMFCB36N60NN-Channel MOSFET 600V, 36A, 90mFeatures Description RDS(on) = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 86nC)process that differentiates it from preceding multi-epi based technologies.

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History: IPI120N06S4-02 | IPD90N04S4-05 | FQT4N20LTF | SSM9972GP

 

 
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