All MOSFET. FCB36N60NTM Datasheet

 

FCB36N60NTM Datasheet and Replacement


   Type Designator: FCB36N60NTM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 112 nC
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 149 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: D2-PAK
 

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FCB36N60NTM Datasheet (PDF)

 ..1. Size:355K  fairchild semi
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FCB36N60NTM

September 2010SupreMOSTMFCB36N60NN-Channel MOSFET 600V, 36A, 90mFeatures Description RDS(on) = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 86nC)process that differentiates it from preceding multi-epi based technologies.

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXFB40N110Q3

Keywords - FCB36N60NTM MOSFET datasheet

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