FCB36N60NTM Specs and Replacement

Type Designator: FCB36N60NTM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 312 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 149 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: D2-PAK

FCB36N60NTM substitution

- MOSFET ⓘ Cross-Reference Search

 

FCB36N60NTM datasheet

 ..1. Size:355K  fairchild semi
 fcb36n60n fcb36n60ntm.pdf pdf_icon

FCB36N60NTM

September 2010 SupreMOSTM FCB36N60N N-Channel MOSFET 600V, 36A, 90m Features Description RDS(on) = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 86nC) process that differentiates it from preceding multi-epi based technologies. ... See More ⇒

Detailed specifications: FCA20N60SF109, FCAB2126, FCB110N65F, FCB11N60FTM, FCB11N60TM, FCB20N60FTM, FCB20N60TM, FCB290N80, IRFP260N, FCD2250N80Z, FCD3400N80Z, FCD4N60TF, FCD4N60TM, FCD5N60TMWS, FCH041N60FF085, FCH041N65FF085, FCH070N60E

Keywords - FCB36N60NTM MOSFET specs

 FCB36N60NTM cross reference

 FCB36N60NTM equivalent finder

 FCB36N60NTM pdf lookup

 FCB36N60NTM substitution

 FCB36N60NTM replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.