FCD5N60TM_WS MOSFET. Datasheet pdf. Equivalent
Type Designator: FCD5N60TM_WS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 54 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 4.6 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 40 nS
Drain-Source Capacitance (Cd): 250 pF
Maximum Drain-Source On-State Resistance (Rds): 0.95 Ohm
Package: D-PAK
FCD5N60TM_WS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FCD5N60TM_WS Datasheet (PDF)
0.1. fcd5n60tm ws.pdf 
Size:938K _fairchild_semi
December 2008 TM SuperFET FCD5N60 / FCU5N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.81Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=16nC) lower gate charge performanc
7.1. fcd5n60 fcu5n60.pdf Size:973K _fairchild_semi
December 2008 TM SuperFET FCD5N60 / FCU5N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.81Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=16nC) lower gate charge performanc
Datasheet: FCB20N60FTM , FCB20N60TM , FCB290N80 , FCB36N60NTM , FCD2250N80Z , FCD3400N80Z , FCD4N60TF , FCD4N60TM , IRF520 , FCH041N60F_F085 , FCH041N65F_F085 , FCH070N60E , FCH20N60 , FCH47N60_F133 , FCI11N60 , FCP20N60FS , FCPF150N65FL1 .
