All MOSFET. FCD5N60TM_WS Datasheet

 

FCD5N60TM_WS MOSFET. Datasheet pdf. Equivalent

Type Designator: FCD5N60TM_WS

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 54 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 4.6 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 40 nS

Drain-Source Capacitance (Cd): 250 pF

Maximum Drain-Source On-State Resistance (Rds): 0.95 Ohm

Package: D-PAK

FCD5N60TM_WS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCD5N60TM_WS Datasheet (PDF)

0.1. fcd5n60tm ws.pdf Size:938K _fairchild_semi

FCD5N60TM_WS
FCD5N60TM_WS

December 2008 TM SuperFET FCD5N60 / FCU5N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.81Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=16nC) lower gate charge performanc

7.1. fcd5n60 fcu5n60.pdf Size:973K _fairchild_semi

FCD5N60TM_WS
FCD5N60TM_WS

December 2008 TM SuperFET FCD5N60 / FCU5N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.81Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=16nC) lower gate charge performanc

 

Datasheet: FCB20N60FTM , FCB20N60TM , FCB290N80 , FCB36N60NTM , FCD2250N80Z , FCD3400N80Z , FCD4N60TF , FCD4N60TM , IRF520 , FCH041N60F_F085 , FCH041N65F_F085 , FCH070N60E , FCH20N60 , FCH47N60_F133 , FCI11N60 , FCP20N60FS , FCPF150N65FL1 .

 

 
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