FCD5N60TMWS Specs and Replacement
Type Designator: FCD5N60TMWS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 250 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: D-PAK
FCD5N60TMWS substitution
FCD5N60TMWS Specs
fcd5n60tm ws.pdf
December 2008 TM SuperFET FCD5N60 / FCU5N60 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.81 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=16nC) lower gate charge performanc... See More ⇒
fcd5n60 fcu5n60.pdf
December 2008 TM SuperFET FCD5N60 / FCU5N60 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.81 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=16nC) lower gate charge performanc... See More ⇒
fcd5n60 fcu5n60.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FCB20N60FTM , FCB20N60TM , FCB290N80 , FCB36N60NTM , FCD2250N80Z , FCD3400N80Z , FCD4N60TF , FCD4N60TM , AON6414A , FCH041N60FF085 , FCH041N65FF085 , FCH070N60E , FCH20N60 , FCH47N60F133 , FCI11N60 , FCP20N60FS , FCPF150N65FL1 .
Keywords - FCD5N60TMWS MOSFET specs
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