FCH041N60FF085 MOSFET Datasheet: N-Ch, 600V, 76A. Full specification with pinout and replacement list

FCH041N60FF085 Specs and Replacement

Type Designator: FCH041N60FF085

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 595 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 76 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48 nS

Cossⓘ - Output Capacitance: 360 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm

Package: TO-247

FCH041N60FF085 substitution

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FCH041N60FF085 datasheet

4.1. Size:617K fairchild semi
fch041n60f f085.pdf pdf_icon

April 2015 FCH041N60F_F085 N-Channel SuperFET II FRFET MOSFET 650 V, 76 A, 41 m D Features Typical RDS(on) = 36 m at VGS = 10 V, ID = 38 A Typical Qg(tot) = 267 nC at VGS = 10V, ID = 38 A G Low Effective Output Capacitance (Typical Coss(eff.) = 720 nF) 100% Avalanche Tested G Qualified to AEC Q101 D TO-247 S S RoHS Compliant Description For current package dra... See More ⇒

4.2. Size:594K fairchild semi
fch041n60f.pdf pdf_icon

December 2013 FCH041N60F N-Channel SuperFET II FRFET MOSFET 600 V, 76 A, 41 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 36 m charge balance technology for outstanding low on-resistance and lower gate charge performance. This techn... See More ⇒

4.3. Size:906K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

4.4. Size:261K inchange semiconductor
fch041n60f.pdf pdf_icon

isc N-Channel MOSFET Transistor FCH041N60F FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Ga... See More ⇒

Detailed specifications: FCB20N60TM , FCB290N80 , FCB36N60NTM , FCD2250N80Z , FCD3400N80Z , FCD4N60TF , FCD4N60TM , FCD5N60TMWS , IRFB4115 , FCH041N65FF085 , FCH070N60E , FCH20N60 , FCH47N60F133 , FCI11N60 , FCP20N60FS , FCPF150N65FL1 , FCPF220N80 .