All MOSFET. FCH041N60F_F085 Datasheet

 

FCH041N60F_F085 MOSFET. Datasheet pdf. Equivalent

Type Designator: FCH041N60F_F085

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 595 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 76 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 267 nC

Rise Time (tr): 48 nS

Drain-Source Capacitance (Cd): 360 pF

Maximum Drain-Source On-State Resistance (Rds): 0.041 Ohm

Package: TO-247

FCH041N60F_F085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCH041N60F_F085 Datasheet (PDF)

1.1. fch041n60f f085.pdf Size:617K _upd-mosfet

FCH041N60F_F085
FCH041N60F_F085

April 2015 FCH041N60F_F085 N-Channel SuperFET II FRFET MOSFET 650 V, 76 A, 41 mΩ D Features Typical RDS(on) = 36 mΩ at VGS = 10 V, ID = 38 A Typical Qg(tot) = 267 nC at VGS = 10V, ID = 38 A G Low Effective Output Capacitance (Typical Coss(eff.) = 720 nF) 100% Avalanche Tested G Qualified to AEC Q101 D TO-247 S S RoHS Compliant Description For current package dra

1.2. fch041n60e.pdf Size:559K _fairchild_semi

FCH041N60F_F085
FCH041N60F_F085

December 2013 FCH041N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 77 A, 41 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 36 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 285 nC

 1.3. fch041n60f f085.pdf Size:617K _fairchild_semi

FCH041N60F_F085
FCH041N60F_F085

April 2015 FCH041N60F_F085 N-Channel SuperFET II FRFET MOSFET 650 V, 76 A, 41 mΩ D Features Typical RDS(on) = 36 mΩ at VGS = 10 V, ID = 38 A Typical Qg(tot) = 267 nC at VGS = 10V, ID = 38 A G Low Effective Output Capacitance (Typical Coss(eff.) = 720 nF) 100% Avalanche Tested G Qualified to AEC Q101 D TO-247 S S RoHS Compliant Description For current package dra

1.4. fch041n60f.pdf Size:594K _fairchild_semi

FCH041N60F_F085
FCH041N60F_F085

December 2013 FCH041N60F N-Channel SuperFET® II FRFET® MOSFET 600 V, 76 A, 41 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 36 mΩ charge balance technology for outstanding low on-resistance and lower gate charge performance. This techn

 1.5. fch041n60f.pdf Size:261K _inchange_semiconductor

FCH041N60F_F085
FCH041N60F_F085

isc N-Channel MOSFET Transistor FCH041N60F ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Ga

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
Back to Top