FCH041N60FF085. Аналоги и основные параметры

Наименование производителя: FCH041N60FF085

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 595 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 76 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 48 ns

Cossⓘ - Выходная емкость: 360 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.041 Ohm

Тип корпуса: TO-247

Аналог (замена) для FCH041N60FF085

- подборⓘ MOSFET транзистора по параметрам

 

FCH041N60FF085 даташит

 4.1. Size:617K  fairchild semi
 fch041n60f f085.pdf pdf_icon

FCH041N60FF085

April 2015 FCH041N60F_F085 N-Channel SuperFET II FRFET MOSFET 650 V, 76 A, 41 m D Features Typical RDS(on) = 36 m at VGS = 10 V, ID = 38 A Typical Qg(tot) = 267 nC at VGS = 10V, ID = 38 A G Low Effective Output Capacitance (Typical Coss(eff.) = 720 nF) 100% Avalanche Tested G Qualified to AEC Q101 D TO-247 S S RoHS Compliant Description For current package dra

 4.2. Size:594K  fairchild semi
 fch041n60f.pdf pdf_icon

FCH041N60FF085

December 2013 FCH041N60F N-Channel SuperFET II FRFET MOSFET 600 V, 76 A, 41 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 36 m charge balance technology for outstanding low on-resistance and lower gate charge performance. This techn

 4.3. Size:906K  onsemi
 fch041n60f.pdf pdf_icon

FCH041N60FF085

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 4.4. Size:261K  inchange semiconductor
 fch041n60f.pdf pdf_icon

FCH041N60FF085

isc N-Channel MOSFET Transistor FCH041N60F FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Ga

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... FCB20N60TM, FCB290N80, FCB36N60NTM, FCD2250N80Z, FCD3400N80Z, FCD4N60TF, FCD4N60TM, FCD5N60TMWS, IRFB4115, FCH041N65FF085, FCH070N60E, FCH20N60, FCH47N60F133, FCI11N60, FCP20N60FS, FCPF150N65FL1, FCPF220N80