FCH041N65FF085 Specs and Replacement
Type Designator: FCH041N65FF085
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 595 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 76 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 10529 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
Package: TO-247
FCH041N65FF085 substitution
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FCH041N65FF085 datasheet
fch041n65f f085.pdf
November 2014 FCH041N65F_F085 N-Channel SuperFET II FRFET MOSFET 650 V, 76 A, 41 m D Features Typical RDS(on) = 34 m at VGS = 10 V, ID = 38 A Typical Qg(tot) = 234 nC at VGS = 10V, ID = 38 A UIS Capability G Qualified to AEC Q101 G RoHS Compliant D TO-247 S S Description SuperFET II MOSFET is Fairchild Semiconductor s brand-new For current package drawing,... See More ⇒
fch041n65f.pdf
December 2014 FCH041N65F N-Channel SuperFET II FRFET MOSFET 650 V, 76 A, 41 m Features Description 700 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 36 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 226 nC... See More ⇒
fch041n65f-f085.pdf
MOSFET N-Channel, SUPERFET) II, FRFET) 650 V, 76 A, 41 mW FCH041N65F-F085 Description SuperFET II Mosfet is ON Semiconductor s brand-new high www.onsemi.com voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize VDS RDS(ON) MAX ID MAX condu... See More ⇒
Detailed specifications: FCB290N80, FCB36N60NTM, FCD2250N80Z, FCD3400N80Z, FCD4N60TF, FCD4N60TM, FCD5N60TMWS, FCH041N60FF085, 2N7000, FCH070N60E, FCH20N60, FCH47N60F133, FCI11N60, FCP20N60FS, FCPF150N65FL1, FCPF220N80, FCPF290N80
Keywords - FCH041N65FF085 MOSFET specs
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