FCI11N60 Specs and Replacement

Type Designator: FCI11N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 98 nS

Cossⓘ - Output Capacitance: 671 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: I2-PAK

FCI11N60 substitution

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FCI11N60 datasheet

 ..1. Size:899K  fairchild semi
 fci11n60.pdf pdf_icon

FCI11N60

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Detailed specifications: FCD4N60TF, FCD4N60TM, FCD5N60TMWS, FCH041N60FF085, FCH041N65FF085, FCH070N60E, FCH20N60, FCH47N60F133, IRFP250N, FCP20N60FS, FCPF150N65FL1, FCPF220N80, FCPF290N80, FCPF4300N80Z, FCPF7N60T, FCPF7N60YDTU, FCU2250N80Z

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