All MOSFET. FCI11N60 Datasheet

 

FCI11N60 Datasheet and Replacement


   Type Designator: FCI11N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 98 nS
   Cossⓘ - Output Capacitance: 671 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: I2-PAK
 

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FCI11N60 Datasheet (PDF)

 ..1. Size:899K  fairchild semi
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FCI11N60

December 2008 TMSuperFETFCI11N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32balance mechanism for outstanding low on-resistance and Ultra Low Gate Charge (typ. Qg = 40nC) lower gate charge performance.

Datasheet: FCD4N60TF , FCD4N60TM , FCD5N60TMWS , FCH041N60FF085 , FCH041N65FF085 , FCH070N60E , FCH20N60 , FCH47N60F133 , IRFP250N , FCP20N60FS , FCPF150N65FL1 , FCPF220N80 , FCPF290N80 , FCPF4300N80Z , FCPF7N60T , FCPF7N60YDTU , FCU2250N80Z .

History: IRFIZ24GPBF | BRCS040N03DP

Keywords - FCI11N60 MOSFET datasheet

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