All MOSFET. FCU3400N80Z Datasheet

 

FCU3400N80Z MOSFET. Datasheet pdf. Equivalent


   Type Designator: FCU3400N80Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.4 nC
   trⓘ - Rise Time: 6.4 nS
   Cossⓘ - Output Capacitance: 12.7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
   Package: I-PAK

 FCU3400N80Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCU3400N80Z Datasheet (PDF)

 ..1. Size:810K  fairchild semi
 fcd3400n80z fcu3400n80z.pdf

FCU3400N80Z FCU3400N80Z

March 2015FCD3400N80Z / FCU3400N80ZN-Channel SuperFET II MOSFET800 V, 2 A, 3.4 Features Description RDS(on) = 2.75 (Typ.) SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 7.4 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ.

 ..2. Size:843K  onsemi
 fcd3400n80z fcu3400n80z.pdf

FCU3400N80Z FCU3400N80Z

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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