FCU3400N80Z Datasheet and Replacement
Type Designator: FCU3400N80Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 7.4 nC
tr ⓘ - Rise Time: 6.4 nS
Cossⓘ - Output Capacitance: 12.7 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
Package: I-PAK
FCU3400N80Z substitution
FCU3400N80Z Datasheet (PDF)
fcd3400n80z fcu3400n80z.pdf

March 2015FCD3400N80Z / FCU3400N80ZN-Channel SuperFET II MOSFET800 V, 2 A, 3.4 Features Description RDS(on) = 2.75 (Typ.) SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 7.4 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ.
fcd3400n80z fcu3400n80z.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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