FCU3400N80Z Specs and Replacement
Type Designator: FCU3400N80Z
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.4 nS
Cossⓘ - Output Capacitance: 12.7 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
Package: I-PAK
FCU3400N80Z substitution
- MOSFET ⓘ Cross-Reference Search
FCU3400N80Z datasheet
fcd3400n80z fcu3400n80z.pdf
March 2015 FCD3400N80Z / FCU3400N80Z N-Channel SuperFET II MOSFET 800 V, 2 A, 3.4 Features Description RDS(on) = 2.75 (Typ.) SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 7.4 nC) charge balance technology for outstanding low on-resistance Low Eoss (Typ. ... See More ⇒
fcd3400n80z fcu3400n80z.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FCP20N60FS, FCPF150N65FL1, FCPF220N80, FCPF290N80, FCPF4300N80Z, FCPF7N60T, FCPF7N60YDTU, FCU2250N80Z, IRLB4132, FCU7N60TU, FDA16N50, FDA2712, FDA62N28, FDA75N28, FDA79N15, FDAF59N30, FDAF62N28
Keywords - FCU3400N80Z MOSFET specs
FCU3400N80Z cross reference
FCU3400N80Z equivalent finder
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FCU3400N80Z substitution
FCU3400N80Z replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: FDAF59N30
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