All MOSFET. FDA75N28 Datasheet

 

FDA75N28 Datasheet and Replacement


   Type Designator: FDA75N28
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 280 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 111 nC
   tr ⓘ - Rise Time: 580 nS
   Cossⓘ - Output Capacitance: 915 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: TO-3PN
 

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FDA75N28 Datasheet (PDF)

 ..1. Size:767K  fairchild semi
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FDA75N28

October 2006TMUniFETFDA75N28 280V N-Channel MOSFETFeatures Description 75A, 280V, RDS(on) = 0.041 @VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 111 nC)stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has been especially tailored

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Keywords - FDA75N28 MOSFET datasheet

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