FDA75N28 Specs and Replacement

Type Designator: FDA75N28

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 520 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 280 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 580 nS

Cossⓘ - Output Capacitance: 915 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm

Package: TO-3PN

FDA75N28 substitution

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FDA75N28 datasheet

 ..1. Size:767K  fairchild semi
 fda75n28.pdf pdf_icon

FDA75N28

October 2006 TM UniFET FDA75N28 280V N-Channel MOSFET Features Description 75A, 280V, RDS(on) = 0.041 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 111 nC) stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has been especially tailored ... See More ⇒

Detailed specifications: FCPF7N60T, FCPF7N60YDTU, FCU2250N80Z, FCU3400N80Z, FCU7N60TU, FDA16N50, FDA2712, FDA62N28, SPP20N60C3, FDA79N15, FDAF59N30, FDAF62N28, FDAF69N25, FDAF75N28, FDB14AN06LA0, FDB20AN06A0, FDB24AN06LA0

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.