All MOSFET. FDB5800F085 Datasheet

 

FDB5800F085 Datasheet and Replacement


   Type Designator: FDB5800F085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 242 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 628 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO-263AB
 

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FDB5800F085 Datasheet (PDF)

 7.1. Size:247K  fairchild semi
 fdb5800 f085.pdf pdf_icon

FDB5800F085

September 2005FDB5800N-Channel Logic Level PowerTrench MOSFET 60V, 80A, 7mFeatures Applications rDS(ON) = 5.5m (Typ.), VGS = 5V, ID = 80A Motor/ Body Load Control High performance trench technology for extermely low ABS SystemsRdson Power Train Management Low Gate Charge Injection Systems High power and current handling capability DC-DC Converters and Off-Line

 7.2. Size:249K  fairchild semi
 fdb5800.pdf pdf_icon

FDB5800F085

September 2005FDB5800N-Channel Logic Level PowerTrench MOSFET 60V, 80A, 7mFeatures Applications rDS(ON) = 5.5m (Typ.), VGS = 5V, ID = 80A Motor/ Body Load Control High performance trench technology for extermely low ABS SystemsRdson Power Train Management Low Gate Charge Injection Systems High power and current handling capability DC-DC Converters and Off-Line

Datasheet: FDB24AN06LA0 , FDB2570 , FDB2670 , FDB3672 , FDB42AN15A0 , FDB44N25TM , FDB52N20TM , FDB5645 , IRFZ24N , FDB6021P , FDB6670AS , FDB6690S , FDB7030LL86Z , FDB8132 , FDB8160 , FDB8444TS , FDB86563F085 .

Keywords - FDB5800F085 MOSFET datasheet

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