FDB5800F085 Specs and Replacement

Type Designator: FDB5800F085

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 242 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 628 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO-263AB

FDB5800F085 substitution

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FDB5800F085 datasheet

 7.1. Size:247K  fairchild semi
 fdb5800 f085.pdf pdf_icon

FDB5800F085

September 2005 FDB5800 N-Channel Logic Level PowerTrench MOSFET 60V, 80A, 7m Features Applications rDS(ON) = 5.5m (Typ.), VGS = 5V, ID = 80A Motor/ Body Load Control High performance trench technology for extermely low ABS Systems Rdson Power Train Management Low Gate Charge Injection Systems High power and current handling capability DC-DC Converters and Off-Line ... See More ⇒

 7.2. Size:249K  fairchild semi
 fdb5800.pdf pdf_icon

FDB5800F085

September 2005 FDB5800 N-Channel Logic Level PowerTrench MOSFET 60V, 80A, 7m Features Applications rDS(ON) = 5.5m (Typ.), VGS = 5V, ID = 80A Motor/ Body Load Control High performance trench technology for extermely low ABS Systems Rdson Power Train Management Low Gate Charge Injection Systems High power and current handling capability DC-DC Converters and Off-Line ... See More ⇒

Detailed specifications: FDB24AN06LA0, FDB2570, FDB2670, FDB3672, FDB42AN15A0, FDB44N25TM, FDB52N20TM, FDB5645, TK10A60D, FDB6021P, FDB6670AS, FDB6690S, FDB7030LL86Z, FDB8132, FDB8160, FDB8444TS, FDB86563F085

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.