FDB6021P Specs and Replacement

Type Designator: FDB6021P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 302 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TO-263AB

FDB6021P substitution

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FDB6021P datasheet

 ..1. Size:135K  fairchild semi
fdb6021p.pdf pdf_icon

FDB6021P

January 2004 FDB6021P 20V P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel power MOSFET uses Fairchild s low 28 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 V voltage PowerTrench process. It has been optimized for RDS(ON) = 40 m @ VGS = 2.5 V power management applications. RDS(ON) = 65 m @ VGS = 1.8 V Applications ... See More ⇒

 9.1. Size:407K  fairchild semi
fdp6035l fdb6035l.pdf pdf_icon

FDB6021P

April 1998 FDP6035L/FDB6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power 58 A, 30 V. RDS(ON) = 0.011 @ VGS=10 V RDS(ON) = 0.019 @ VGS=4.5 V. field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very Low gate charge (typic... See More ⇒

 9.2. Size:408K  fairchild semi
fdp603al fdb603al.pdf pdf_icon

FDB6021P

April 1998 FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field 33 A, 30 V. RDS(ON) = 0.022 @ VGS=10 V RDS(ON) = 0.036 @ VGS=4.5 V. effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density Critica... See More ⇒

 9.3. Size:192K  fairchild semi
fdp6035al fdb6035al.pdf pdf_icon

FDB6021P

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth... See More ⇒

Detailed specifications: FDB2570, FDB2670, FDB3672, FDB42AN15A0, FDB44N25TM, FDB52N20TM, FDB5645, FDB5800F085, AO4407, FDB6670AS, FDB6690S, FDB7030LL86Z, FDB8132, FDB8160, FDB8444TS, FDB86563F085, FDB8874

Keywords - FDB6021P MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs