Справочник MOSFET. FDB6021P

 

FDB6021P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDB6021P
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 37 W
   Предельно допустимое напряжение сток-исток |Uds|: 20 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 8 V
   Пороговое напряжение включения |Ugs(th)|: 1.5 V
   Максимально допустимый постоянный ток стока |Id|: 28 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 20 nC
   Время нарастания (tr): 10 ns
   Выходная емкость (Cd): 302 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.03 Ohm
   Тип корпуса: TO-263AB

 Аналог (замена) для FDB6021P

 

 

FDB6021P Datasheet (PDF)

 ..1. Size:135K  fairchild semi
fdb6021p.pdf

FDB6021P
FDB6021P

January 2004 FDB6021P 20V P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel power MOSFET uses Fairchilds low 28 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 V voltage PowerTrench process. It has been optimized for RDS(ON) = 40 m @ VGS = 2.5 V power management applications. RDS(ON) = 65 m @ VGS = 1.8 V Applications

 9.1. Size:407K  fairchild semi
fdp6035l fdb6035l.pdf

FDB6021P
FDB6021P

April 1998 FDP6035L/FDB6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel logic level enhancement mode power 58 A, 30 V. RDS(ON) = 0.011 @ VGS=10 VRDS(ON) = 0.019 @ VGS=4.5 V.field effect transistors are produced using Fairchild'sproprietary, high cell density, DMOS technology. This veryLow gate charge (typic

 9.2. Size:408K  fairchild semi
fdp603al fdb603al.pdf

FDB6021P
FDB6021P

April 1998 FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel logic level enhancement mode power field 33 A, 30 V. RDS(ON) = 0.022 @ VGS=10 VRDS(ON) = 0.036 @ VGS=4.5 V.effect transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high densityCritica

 9.3. Size:192K  fairchild semi
fdp6035al fdb6035al.pdf

FDB6021P
FDB6021P

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

 9.4. Size:94K  fairchild semi
fdp6030l fdb6030l.pdf

FDB6021P
FDB6021P

August 2003FDP6030L/FDB6030LN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET has been 48 A, 30 V RDS(ON) = 13 m @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 17 m @ VGS = 4.5 VDC/DC converters using either synchronous orconventional switching PWM controllers. Critical DC electr

 9.5. Size:90K  fairchild semi
fdp6030bl fdb6030bl.pdf

FDB6021P
FDB6021P

July 2000FDP6030BL/FDB6030BLN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET has been designed 40 A, 30 V. RDS(ON) = 0.018 @ VGS = 10 V RDS(ON) = 0.024 @ VGS = 4.5 V.specifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventional Critical DC elect

 9.6. Size:203K  onsemi
fdp6030bl fdb6030bl.pdf

FDB6021P
FDB6021P

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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