FDB6021P. Аналоги и основные параметры

Наименование производителя: FDB6021P

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 37 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 8 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 28 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10 ns

Cossⓘ - Выходная емкость: 302 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm

Тип корпуса: TO-263AB

Аналог (замена) для FDB6021P

- подборⓘ MOSFET транзистора по параметрам

 

FDB6021P даташит

 ..1. Size:135K  fairchild semi
fdb6021p.pdfpdf_icon

FDB6021P

January 2004 FDB6021P 20V P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel power MOSFET uses Fairchild s low 28 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 V voltage PowerTrench process. It has been optimized for RDS(ON) = 40 m @ VGS = 2.5 V power management applications. RDS(ON) = 65 m @ VGS = 1.8 V Applications

 9.1. Size:407K  fairchild semi
fdp6035l fdb6035l.pdfpdf_icon

FDB6021P

April 1998 FDP6035L/FDB6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power 58 A, 30 V. RDS(ON) = 0.011 @ VGS=10 V RDS(ON) = 0.019 @ VGS=4.5 V. field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very Low gate charge (typic

 9.2. Size:408K  fairchild semi
fdp603al fdb603al.pdfpdf_icon

FDB6021P

April 1998 FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field 33 A, 30 V. RDS(ON) = 0.022 @ VGS=10 V RDS(ON) = 0.036 @ VGS=4.5 V. effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density Critica

 9.3. Size:192K  fairchild semi
fdp6035al fdb6035al.pdfpdf_icon

FDB6021P

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

Другие IGBT... FDB2570, FDB2670, FDB3672, FDB42AN15A0, FDB44N25TM, FDB52N20TM, FDB5645, FDB5800F085, AO4407, FDB6670AS, FDB6690S, FDB7030LL86Z, FDB8132, FDB8160, FDB8444TS, FDB86563F085, FDB8874