FDC5612F095 Specs and Replacement
Type Designator: FDC5612F095
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 80 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TO-252
FDC5612F095 substitution
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FDC5612F095 datasheet
fdc5612 f095.pdf
December 2004 FDC5612 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.3 A, 60 V. RDS(ON) = 0.055 @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.064 @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge (12.5nC typical). Thes... See More ⇒
fdc5612.pdf
December 2004 FDC5612 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.3 A, 60 V. RDS(ON) = 0.055 @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.064 @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge (12.5nC typical). Thes... See More ⇒
fdc5612.pdf
FDC5612 60V N-Channel PowerTrench MOSFET Features General Description 4.3 A, 60 V. RDS(ON) = 0.055 @ VGS = 10 V This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.064 @ VGS = 6 V converters using either synchronous or conventional Low gate charge (12.5nC typical). switching PWM controllers. These MOSFETs featur... See More ⇒
Detailed specifications: FDBL86363F085, FDBL86366F085, FDBL86561F085, FDBL86563F085, FDC2512F095, FDC3512F095, FDC3612F095, FDC3616N, IRF1405, FDC6020C, FDC602PF095, FDC633NF095, FDC640PF095, FDC645NF095, FDC697P, FDC697PF077, FDC699P
Keywords - FDC5612F095 MOSFET specs
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