FDC5612F095 Datasheet and Replacement
Type Designator: FDC5612F095
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TO-252
FDC5612F095 substitution
FDC5612F095 Datasheet (PDF)
fdc5612 f095.pdf

December 2004FDC561260V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 4.3 A, 60 V. RDS(ON) = 0.055 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 0.064 @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. Low gate charge (12.5nC typical).Thes
fdc5612.pdf

December 2004FDC561260V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 4.3 A, 60 V. RDS(ON) = 0.055 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 0.064 @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. Low gate charge (12.5nC typical).Thes
fdc5612.pdf

FDC561260V N-Channel PowerTrench MOSFETFeaturesGeneral Description 4.3 A, 60 V. RDS(ON) = 0.055 @ VGS = 10 VThis N-Channel MOSFET has been designedspecifically to improve the overall efficiency of DC/DC RDS(ON) = 0.064 @ VGS = 6 Vconverters using either synchronous or conventional Low gate charge (12.5nC typical).switching PWM controllers.These MOSFETs featur
Datasheet: FDBL86363F085 , FDBL86366F085 , FDBL86561F085 , FDBL86563F085 , FDC2512F095 , FDC3512F095 , FDC3612F095 , FDC3616N , NCEP15T14 , FDC6020C , FDC602PF095 , FDC633NF095 , FDC640PF095 , FDC645NF095 , FDC697P , FDC697PF077 , FDC699P .
History: R6007JND3
Keywords - FDC5612F095 MOSFET datasheet
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History: R6007JND3



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