FDC699PF077
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDC699PF077
Marking Code: ..699
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 560
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022
Ohm
Package:
SSOT-6
FDC699PF077
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDC699PF077
Datasheet (PDF)
7.1. Size:161K fairchild semi
fdc699p fdc699p f077.pdf
January 2004 FDC699P P-Channel 2.5V PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged 7 A, 20 V RDS(ON) = 22 m @ VGS = 4.5 V gate version of Fairchild Semiconductors advanced RDS(ON) = 30 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power management applications with a wide range of g
9.1. Size:157K fairchild semi
fdc697p fdc697p f077.pdf
January 2004 FDC697P P-Channel 1.8V PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 8 A, 20 V RDS(ON) = 20 m @ VGS = 4.5 V Fairchilds advanced low voltage Power TrenchRDS(ON) = 25 m @ VGS = 2.5 V process. It has been optimized for battery power RDS(ON) = 35 m @ VGS = 1.8 V management applications.
9.2. Size:159K fairchild semi
fdc697p.pdf
January 2004 FDC697P P-Channel 1.8V PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 8 A, 20 V RDS(ON) = 20 m @ VGS = 4.5 V Fairchilds advanced low voltage Power TrenchRDS(ON) = 25 m @ VGS = 2.5 V process. It has been optimized for battery power RDS(ON) = 35 m @ VGS = 1.8 V management applications.
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