All MOSFET. FDD16AN08A0NF054 Datasheet

 

FDD16AN08A0NF054 Datasheet and Replacement


   Type Designator: FDD16AN08A0NF054
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO-252AA
 

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FDD16AN08A0NF054 Datasheet (PDF)

 3.1. Size:242K  fairchild semi
 fdd16an08a0.pdf pdf_icon

FDD16AN08A0NF054

May 2002FDD16AN08A0N-Channel UltraFET Trench MOSFET75V, 50A, 16mFeatures Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 50A 42V Automotive Load Control Qg(tot) = 31nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capability (Sing

 3.2. Size:2944K  fairchild semi
 fdd16an08a0 f085 fdd16an08 f085.pdf pdf_icon

FDD16AN08A0NF054

October 2008FDD16AN08A0_F085N-Channel UltraFET Trench MOSFET75V, 50A, 16mFeatures Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 50A 42V Automotive Load Control Qg(tot) = 31nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capabil

 3.3. Size:239K  fairchild semi
 fdd16an08a0 nf054.pdf pdf_icon

FDD16AN08A0NF054

May 2002FDD16AN08A0N-Channel UltraFET Trench MOSFET75V, 50A, 16mFeatures Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 50A 42V Automotive Load Control Qg(tot) = 31nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capability (Sing

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History: SSM630GP

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