FDD3570 Specs and Replacement
Type Designator: FDD3570
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 69 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 43 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 230 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: TO-252
FDD3570 substitution
- MOSFET ⓘ Cross-Reference Search
FDD3570 datasheet
fdd3570.pdf
February 2000 PRELIMINARY FDD3570 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET has been 10 A, 80 V. RDS(ON) = 0.019 @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 0.022 @ VGS = 6 V. DC/DC converters using either synchronous or conventional switching PWM controllers. Fast switching... See More ⇒
fdd3510h.pdf
April 2008 FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel 80V, 13.9A, 80m P-Channel -80V, -9.4A, 190m Features General Description Q1 N-Channel These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor s Max rDS(on) = 80m at VGS = 10V, ID = 4.3A advanced PowerTrench process that has been especially Max rDS(on... See More ⇒
fdd3510h.pdf
FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel 80V, 13.9A, 80m P-Channel -80V, -9.4A, 190m Features General Description Q1 N-Channel These dual N and P- Channel enhancement mode Power Max rDS(on) = 80m at VGS = 10V, ID = 4.3A MOSFETs are produced using ON Semiconductor s advanced Max rDS(on) = 88m at VGS = 6V, ID = 4.1A PowerTrench process that has b... See More ⇒
Detailed specifications: FDD14AN06LA0, FDD16AN08A0NF054, FDD20AN06A0, FDD24AN06LA0, FDD2512, FDD2570, FDD2612, FDD26AN06A0, IRF540N, FDD3N50NZTM, FDD45AN06LA0, FDD45AN06LA0F085, FDD5810, FDD5N60NZTM, FDD6512A, FDD6606, FDD6632
Keywords - FDD3570 MOSFET specs
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