All MOSFET. FDD45AN06LA0 Datasheet

 

FDD45AN06LA0 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDD45AN06LA0
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO-252AA

 FDD45AN06LA0 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD45AN06LA0 Datasheet (PDF)

 ..1. Size:225K  fairchild semi
 fdd45an06la0 fdd45an06la0 f085.pdf

FDD45AN06LA0 FDD45AN06LA0

February 2004FDD45AN06LA0N-Channel PowerTrench MOSFET60V, 22A, 45mFeatures Applications rDS(ON) = 39m (Typ.), VGS = 5V, ID = 22A Motor / Body Load Control Qg(tot) = 8.3nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC co

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