All MOSFET. FDD5810 Datasheet

 

FDD5810 Datasheet and Replacement


   Type Designator: FDD5810
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 72 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 37 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 24 nC
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO-252AA
 

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FDD5810 Datasheet (PDF)

 ..1. Size:222K  fairchild semi
fdd5810 f085.pdf pdf_icon

FDD5810

May 2010FDD5810_F085N-Channel Logic Level Trench MOSFET 60V, 36A, 27m ApplicationsFeatures Motor / Body Load Control RDS(ON) = 22m Typ.), VGS = 5V, ID = 29A ABS Systems Qg(5) = 13nC (Typ.), VGS = 5V Powertrain Management Low Miller Charge Injection System Low Qrr Body Diode DC-DC converters and Off-line UPS UIS Capability (Single Pulse / Repetitive Pulse) Dis

 ..2. Size:321K  fairchild semi
fdd5810.pdf pdf_icon

FDD5810

October 2007FDD5810N-Channel Logic Level Trench MOSFET 60V, 36A, 27mApplicationsFeatures Motor / Body Load Control RDS(ON) = 22m (Typ.), VGS = 5V, ID = 29A ABS Systems Qg(5) = 13nC (Typ.), VGS = 5V Powertrain Management Low Miller Charge Injection System Low Qrr Body Diode DC-DC converters and Off-line UPS UIS Capability (Single Pulse / Repetitive Pulse) Di

 0.1. Size:258K  onsemi
fdd5810-f085.pdf pdf_icon

FDD5810

FDD5810-F085N-Channel Logic Level TrenchMOSFET 60V, 36A, 27m Applications Motor / Body Load ControlFeatures ABS Systems RDS(ON) = 22m Typ.), VGS = 5V, ID = 29A Powertrain Management Qg(5) = 13nC (Typ.), VGS = 5V Injection System Low Miller Charge DC-DC converters and Off-line UPS Low Qrr Body Diode Distributed Power Architecture and VRMs UIS Capability (Single

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