FDD6672A MOSFET. Datasheet pdf. Equivalent

   Type Designator: FDD6672A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 65 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 46 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-252

FDD6672A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS

FDD6672A Datasheet (PDF)

..1. Size:76K fairchild semi
fdd6672a.pdf pdf_icon

April 2001 FDD6672A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 65 A, 30 V. RDS(ON) = 9.5 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 8 m @ VGS = 10 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for

..2. Size:287K inchange semiconductor
fdd6672a.pdf pdf_icon

isc N-Channel MOSFET Transistor FDD6672AFEATURESDrain Current : I =65A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =8m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

8.1. Size:117K fairchild semi
fdd6676s.pdf pdf_icon

December 2002 FDD6676S 30V N-Channel PowerTrench MOSFET General Description Features The FDS6676S is designed to replace a DPAK 78 A, 30 V RDS(ON) = 6.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) = 7.1 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Low gate charge

8.2. Size:91K fairchild semi
fdd6670s.pdf pdf_icon

September 2001 FDD6670S 30V N-Channel PowerTrench SyncFET General Description Features The FDD6670S is designed to replace a single 64 A, 30 V RDS(ON) = 9 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) = 12.5 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Includes S

8.3. Size:147K fairchild semi
fdd6670al.pdf pdf_icon

May 2004 FDD6670AL 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 84 A, 30 V. RDS(ON) = 5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 6 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate c

8.4. Size:80K fairchild semi
fdd6676.pdf pdf_icon

April 2001 FDD6676 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 78 A, 30 V RDS(ON) = 7.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 8.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for

8.5. Size:105K fairchild semi
fdd6670as.pdf pdf_icon

May 2005 FDD6670AS 30V N-Channel PowerTrench SyncFET General Description Features The FDD6670AS is designed to replace a single 76 A, 30 V RDS(ON) max= 8.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) max= 10.4 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Inclu

8.6. Size:109K fairchild semi
fdd6670a.pdf pdf_icon

July 2005FDD6670A30V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 66 A, 30 V RDS(ON) = 8 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 10 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate chargelow ga

8.7. Size:411K fairchild semi
fdd6676as.pdf pdf_icon

April 2008FDD6676AS tm30V N-Channel PowerTrench SyncFET General Description Features The FDD6676AS is designed to replace a single 90 A, 30 V RDS(ON) = 5.7 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) = 7.1 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Includ

8.8. Size:287K inchange semiconductor
fdd6676s.pdf pdf_icon

isc N-Channel MOSFET Transistor FDD6676SFEATURESDrain Current : I =78A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

8.9. Size:308K inchange semiconductor
fdd6670s.pdf pdf_icon

isc N-Channel MOSFET Transistor FDD6670SFEATURESDrain Current : I =64A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =59m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

8.10. Size:308K inchange semiconductor
fdd6670al.pdf pdf_icon

isc N-Channel MOSFET Transistor FDD6670ALFEATURESDrain Current : I =84A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

8.11. Size:287K inchange semiconductor
fdd6676.pdf pdf_icon

isc N-Channel MOSFET Transistor FDD6676FEATURESDrain Current : I =78A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =7.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

8.12. Size:308K inchange semiconductor
fdd6670a.pdf pdf_icon

isc N-Channel MOSFET Transistor FDD6670AFEATURESDrain Current : I =66A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =8m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

LIST

Last Update

All MOSFET. FDD6672A Datasheet

FDD6672A MOSFET. Datasheet pdf. Equivalent

FDD6672A Datasheet (PDF)

LIST

Last Update

AllTransistors(C)