FDD7N25LZTM Datasheet. Specs and Replacement

Type Designator: FDD7N25LZTM  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: D-PAK

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FDD7N25LZTM datasheet

 ..1. Size:285K  fairchild semi
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FDD7N25LZTM

December 2010 UniFETTM FDD7N25LZ N-Channel MOSFET 250V, 6.2A, 0.55 Features Description RDS(on) = 0.43 ( Typ.)@ VGS = 10V, ID = 3.1A These N-Channel enhancement mode power field effect transis tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge ( Typ.12nC) DMOS technology. Low Crss ( Typ. 8pF) This advance technology has been especial... See More ⇒

 5.1. Size:291K  fairchild semi
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FDD7N25LZTM

December 2010 UniFETTM FDD7N25LZ N-Channel MOSFET 250V, 6.2A, 0.55 Features Description RDS(on) = 0.43 ( Typ.)@ VGS = 10V, ID = 3.1A These N-Channel enhancement mode power field effect transis tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge ( Typ.12nC) DMOS technology. Low Crss ( Typ. 8pF) This advance technology has been especial... See More ⇒

 5.2. Size:750K  onsemi
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FDD7N25LZTM

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 8.1. Size:607K  fairchild semi
 fdd7n20tm.pdf pdf_icon

FDD7N25LZTM

November 2013 FDD7N20TM N-Channel UniFETTM MOSFET 200 V, 5 A, 690 m Features Description UniFETTM MOSFET is Fairchild Semiconductor s high voltage RDS(on) = 580 m (Typ.) @ VGS = 10 V, ID = 2.5 A MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 5 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching perfo... See More ⇒

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Detailed specifications: FDD6776A, FDD6780, FDD6782A, FDD6796, FDD6N20TF, FDD6N50TF, FDD6N50TM, FDD7030BL, 2N7000, FDD7N60NZTM, FDD8580, FDD8586, FDD86367F085, FDD86369F085, FDD8750, FDD9411F085, FDFC2P100

Keywords - FDD7N25LZTM MOSFET specs

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