FDD86367F085 Specs and Replacement
Type Designator: FDD86367F085
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 227 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 49 nS
Cossⓘ - Output Capacitance: 814 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: D-PAK
FDD86367F085 substitution
- MOSFET ⓘ Cross-Reference Search
FDD86367F085 datasheet
fdd86367 f085.pdf
May 2015 FDD86367_F085 N-Channel PowerTrench MOSFET 80 V, 100 A, 4.2 m Features Typical RDS(on) = 3.3 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 68 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers For c... See More ⇒
fdd86367-f085.pdf
FDD86367-F085 N-Channel PowerTrench MOSFET 80 V, 100 A, 4.2 m Features Typical RDS(on) = 3.3 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 68 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers Integrated Start... See More ⇒
fdd86367.pdf
MOSFET N-Channel, POWERTRENCH) 80 V, 100 A, 4.2 mW FDD86367 Features www.onsemi.com Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 68 nC at VGS = 10 V, ID = 80 A D UIS Capability This Device is Pb-Free, Halogen Free/BFR Free and is RoHS Compliant G Applications PowerTrain Management S Solenoid and Motor Drivers N-Channel Int... See More ⇒
Detailed specifications: FDD6N20TF, FDD6N50TF, FDD6N50TM, FDD7030BL, FDD7N25LZTM, FDD7N60NZTM, FDD8580, FDD8586, IRF9540N, FDD86369F085, FDD8750, FDD9411F085, FDFC2P100, FDFC3N108, FDFM2N111, FDFM2P110, FDFMA2N028Z
Keywords - FDD86367F085 MOSFET specs
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History: FDD45AN06LA0F085
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