All MOSFET. FDFMA2P853T Datasheet

 

FDFMA2P853T Datasheet and Replacement


   Type Designator: FDFMA2P853T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: MICROFET2X2THIN
 

 FDFMA2P853T substitution

   - MOSFET ⓘ Cross-Reference Search

 

FDFMA2P853T Datasheet (PDF)

 ..1. Size:346K  fairchild semi
fdfma2p853t.pdf pdf_icon

FDFMA2P853T

December 2008FDFMA2P853TtmIntegrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 mFeatures General DescriptionThis device is designed specifically as a single package solution MOSFET:for the battery charge switch in cellular handset and other Max rDS(on) = 120 m at VGS = 4.5 V, ID = 3.0 Aultra-portable applications. It features a MOS

 4.1. Size:392K  fairchild semi
fdfma2p853.pdf pdf_icon

FDFMA2P853T

September 2008July 2014FDFMA2P853Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description FeaturesThis device is designed specifically as a single package MOSFET:solution for the battery charge switch in cellular handset -3.0 A, -20V. RDS(ON) = 120 m @ VGS = -4.5 V and other ultra-portable applications. It features a MOSFET with low on-state resis

 5.1. Size:602K  fairchild semi
fdfma2p857.pdf pdf_icon

FDFMA2P853T

July 2014FDFMA2P857Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.0A, 120mFeatures General DescriptionThis device is designed specifically as a single package solution MOSFET:for the battery charge switch in cellular handset and other ultra- Max rDS(on) = 120m at VGS = 4.5V, ID = 3.0Aportable applications. It features a MOSFET with low on-s

 5.2. Size:289K  fairchild semi
fdfma2p859t.pdf pdf_icon

FDFMA2P853T

July 2009FDFMA2P859TIntegrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 m Features General DescriptionThis device is designed specifically as a single package solution MOSFET:for the battery charge switch in cellular handset and other Max rDS(on) = 120 m at VGS = 4.5 V, ID = 3.0 Aultra-portable applications. It features a MOSFET with low

Datasheet: FDD9411F085 , FDFC2P100 , FDFC3N108 , FDFM2N111 , FDFM2P110 , FDFMA2N028Z , FDFMA2P029Z , FDFMA2P853 , RFP50N06 , FDFMA2P857 , FDFMA2P859T , FDFMA3N109 , FDFME2P823ZT , FDFME3N311ZT , FDFMJ2P023Z , FDFS2P102 , FDFS2P102A .

History: AP9973GJ-HF | SFF440 | SIHF9530S

Keywords - FDFMA2P853T MOSFET datasheet

 FDFMA2P853T cross reference
 FDFMA2P853T equivalent finder
 FDFMA2P853T lookup
 FDFMA2P853T substitution
 FDFMA2P853T replacement

 

 
Back to Top

 


 
.