FDFMA2P853T
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDFMA2P853T
Marking Code: 53
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3
V
|Id|ⓘ - Maximum Drain Current: 3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 80
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12
Ohm
Package: MICROFET2X2THIN
FDFMA2P853T
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDFMA2P853T
Datasheet (PDF)
..1. Size:346K fairchild semi
fdfma2p853t.pdf
December 2008FDFMA2P853TtmIntegrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 mFeatures General DescriptionThis device is designed specifically as a single package solution MOSFET:for the battery charge switch in cellular handset and other Max rDS(on) = 120 m at VGS = 4.5 V, ID = 3.0 Aultra-portable applications. It features a MOS
4.1. Size:392K fairchild semi
fdfma2p853.pdf
September 2008July 2014FDFMA2P853Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description FeaturesThis device is designed specifically as a single package MOSFET:solution for the battery charge switch in cellular handset -3.0 A, -20V. RDS(ON) = 120 m @ VGS = -4.5 V and other ultra-portable applications. It features a MOSFET with low on-state resis
5.1. Size:602K fairchild semi
fdfma2p857.pdf
July 2014FDFMA2P857Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.0A, 120mFeatures General DescriptionThis device is designed specifically as a single package solution MOSFET:for the battery charge switch in cellular handset and other ultra- Max rDS(on) = 120m at VGS = 4.5V, ID = 3.0Aportable applications. It features a MOSFET with low on-s
5.2. Size:289K fairchild semi
fdfma2p859t.pdf
July 2009FDFMA2P859TIntegrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 m Features General DescriptionThis device is designed specifically as a single package solution MOSFET:for the battery charge switch in cellular handset and other Max rDS(on) = 120 m at VGS = 4.5 V, ID = 3.0 Aultra-portable applications. It features a MOSFET with low
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