Справочник MOSFET. FDFMA2P853T

 

FDFMA2P853T Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDFMA2P853T
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.4 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 80 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm
   Тип корпуса: MICROFET2X2THIN
     - подбор MOSFET транзистора по параметрам

 

FDFMA2P853T Datasheet (PDF)

 ..1. Size:346K  fairchild semi
 fdfma2p853t.pdf pdf_icon

FDFMA2P853T

December 2008FDFMA2P853TtmIntegrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 mFeatures General DescriptionThis device is designed specifically as a single package solution MOSFET:for the battery charge switch in cellular handset and other Max rDS(on) = 120 m at VGS = 4.5 V, ID = 3.0 Aultra-portable applications. It features a MOS

 4.1. Size:392K  fairchild semi
 fdfma2p853.pdf pdf_icon

FDFMA2P853T

September 2008July 2014FDFMA2P853Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description FeaturesThis device is designed specifically as a single package MOSFET:solution for the battery charge switch in cellular handset -3.0 A, -20V. RDS(ON) = 120 m @ VGS = -4.5 V and other ultra-portable applications. It features a MOSFET with low on-state resis

 5.1. Size:602K  fairchild semi
 fdfma2p857.pdf pdf_icon

FDFMA2P853T

July 2014FDFMA2P857Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.0A, 120mFeatures General DescriptionThis device is designed specifically as a single package solution MOSFET:for the battery charge switch in cellular handset and other ultra- Max rDS(on) = 120m at VGS = 4.5V, ID = 3.0Aportable applications. It features a MOSFET with low on-s

 5.2. Size:289K  fairchild semi
 fdfma2p859t.pdf pdf_icon

FDFMA2P853T

July 2009FDFMA2P859TIntegrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 m Features General DescriptionThis device is designed specifically as a single package solution MOSFET:for the battery charge switch in cellular handset and other Max rDS(on) = 120 m at VGS = 4.5 V, ID = 3.0 Aultra-portable applications. It features a MOSFET with low

ПОКАЗАТЬ ЕЩЁ

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History: MIC94050BM4TR | NTMSD3P102R2 | 2SK3572-Z | UPA2708GR | AS2305 | CS4J60A3-G | IXFV26N60PS

 

 
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