FDFMA2P853T. Аналоги и основные параметры

Наименование производителя: FDFMA2P853T

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.4 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 8 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 11 ns

Cossⓘ - Выходная емкость: 80 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm

Тип корпуса: MICROFET2X2THIN

Аналог (замена) для FDFMA2P853T

- подборⓘ MOSFET транзистора по параметрам

 

FDFMA2P853T даташит

 ..1. Size:346K  fairchild semi
 fdfma2p853t.pdf pdf_icon

FDFMA2P853T

December 2008 FDFMA2P853T tm Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 m Features General Description This device is designed specifically as a single package solution MOSFET for the battery charge switch in cellular handset and other Max rDS(on) = 120 m at VGS = 4.5 V, ID = 3.0 A ultra-portable applications. It features a MOS

 4.1. Size:392K  fairchild semi
 fdfma2p853.pdf pdf_icon

FDFMA2P853T

September 2008 July 2014 FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package MOSFET solution for the battery charge switch in cellular handset -3.0 A, -20V. RDS(ON) = 120 m @ VGS = -4.5 V and other ultra-portable applications. It features a MOSFET with low on-state resis

 5.1. Size:602K  fairchild semi
 fdfma2p857.pdf pdf_icon

FDFMA2P853T

July 2014 FDFMA2P857 Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.0A, 120m Features General Description This device is designed specifically as a single package solution MOSFET for the battery charge switch in cellular handset and other ultra- Max rDS(on) = 120m at VGS = 4.5V, ID = 3.0A portable applications. It features a MOSFET with low on-s

 5.2. Size:289K  fairchild semi
 fdfma2p859t.pdf pdf_icon

FDFMA2P853T

July 2009 FDFMA2P859T Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 m Features General Description This device is designed specifically as a single package solution MOSFET for the battery charge switch in cellular handset and other Max rDS(on) = 120 m at VGS = 4.5 V, ID = 3.0 A ultra-portable applications. It features a MOSFET with low

ПОКАЗАТЬ ЕЩЁ

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