IRFPC50LC Datasheet and Replacement
Type Designator: IRFPC50LC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 270 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO247AC
IRFPC50LC substitution
IRFPC50LC Datasheet (PDF)
irfpc50lc.pdf

PD - 9.1233IRFPC50LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementVDSS = 600VEnhanced 30V Vgs RatingReduced Ciss, Coss, CrssRDS(on) = 0.60Isolated Central Mounting HoleDynamic dv/dt RatedRepetitive Avalanche Rated ID = 11ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional
irfpc50lcpbf.pdf

IRFPC50LC, SiHFPC50LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.60 Enhanced 30 V VGS RatingRoHS* Reduced Ciss, Coss, CrssCOMPLIANTQg (Max.) (nC) 84 Isolated Central Mounting HoleQgs (nC) 18 Dynamic dV/dt RatingQgd (nC) 36 Repetitiv
irfpc50lc sihfpc50lc.pdf

IRFPC50LC, SiHFPC50LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.60 Enhanced 30 V VGS RatingRoHS* Reduced Ciss, Coss, CrssCOMPLIANTQg (Max.) (nC) 84 Isolated Central Mounting HoleQgs (nC) 18 Dynamic dV/dt RatingQgd (nC) 36 Repetitive
Datasheet: IRFP9241 , IRFP9242 , IRFP9243 , IRFPC30 , IRFPC40 , IRFPC48 , IRFPC50 , IRFPC50A , IRF1405 , IRFPC60 , IRFPC60LC , IRFPE30 , IRFPE40 , IRFPE50 , IRFPF30 , IRFPF40 , IRFPF50 .
Keywords - IRFPC50LC MOSFET datasheet
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History: UM6J1N | AM1432NE



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