IRFPC50LC Specs and Replacement
Type Designator: IRFPC50LC
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 270 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO247AC
IRFPC50LC substitution
- MOSFET ⓘ Cross-Reference Search
IRFPC50LC datasheet
irfpc50lc.pdf
PD - 9.1233 IRFPC50LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 600V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.60 Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 11A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional... See More ⇒
irfpc50lcpbf.pdf
IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 600 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.60 Enhanced 30 V VGS Rating RoHS* Reduced Ciss, Coss, Crss COMPLIANT Qg (Max.) (nC) 84 Isolated Central Mounting Hole Qgs (nC) 18 Dynamic dV/dt Rating Qgd (nC) 36 Repetitiv... See More ⇒
irfpc50lc sihfpc50lc.pdf
IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 600 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.60 Enhanced 30 V VGS Rating RoHS* Reduced Ciss, Coss, Crss COMPLIANT Qg (Max.) (nC) 84 Isolated Central Mounting Hole Qgs (nC) 18 Dynamic dV/dt Rating Qgd (nC) 36 Repetitive... See More ⇒
Detailed specifications: IRFP9241, IRFP9242, IRFP9243, IRFPC30, IRFPC40, IRFPC48, IRFPC50, IRFPC50A, IRF830, IRFPC60, IRFPC60LC, IRFPE30, IRFPE40, IRFPE50, IRFPF30, IRFPF40, IRFPF50
Keywords - IRFPC50LC MOSFET specs
IRFPC50LC cross reference
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