FDFS6N548
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDFS6N548
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 2
nS
Cossⓘ -
Output Capacitance: 100
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023
Ohm
Package:
SO-8
FDFS6N548
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDFS6N548
Datasheet (PDF)
..1. Size:617K fairchild semi
fdfs6n548.pdf
August 2014FDFS6N548Integrated N-Channel PowerTrench MOSFET and Schottky Diode30V, 7A, 23mFeatures General Description Max rDS(on) = 23m at VGS = 10V, ID = 7AThe FDFS6N548 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low Max rDS(on) = 30m at VGS = 4.5V, ID = 6Aforward voltage drop Schottky barrier rectifier in an SO-
..2. Size:324K onsemi
fdfs6n548.pdf
FDFS6N548Integrated N-ChannelPOWERTRENCH MOSFETand Schottky DiodeDescriptionThe FDFS6N548 combines the exceptional performance ofwww.onsemi.comON Semiconductors PowerTrench MOSFET technology with a verylow forward voltage drop Schottky barrier rectifier in an SO-8 package.This device is designed specifically as a single package solution forDDDC to DC converters. It
8.1. Size:64K fairchild semi
fdfs6n303.pdf
October 2003 FDFS6N303 N-Channel MOSFET with Schottky Diode General Description FeaturesThe FDFS6N303 incorporates a high cell density MOSFET 6 A, 30 V. RDS(ON) = 0.035 @ VGS = 10 V.and low forward drop (0.35V) Schottky diode into a single R = 0.055 @ VGS = 4.5 V.DS(ON)surface mount power package. The MOSFET and SchottkyVF
8.2. Size:500K fairchild semi
fdfs6n754.pdf
Final DatasheetAugust 2014FDFS6N754Integrated N-Channel PowerTrench MOSFET and Schottky Diode30V, 4A, 56mFeatures General Description Max rDS(on) = 56m at VGS = 0V, ID = 4AThe FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very Max rDS(on) = 75m at VGS = 4.5V, ID = 3.5Alow forward voltage drop Schottky barrier re
Datasheet: WPB4002
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