FDFS6N548 - параметры транзистора MOSFET, его аналоги, datasheet

FDFS6N548 Datasheet (PDF)

..1. Size:617K fairchild semi
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August 2014FDFS6N548Integrated N-Channel PowerTrench MOSFET and Schottky Diode30V, 7A, 23mFeatures General Description Max rDS(on) = 23m at VGS = 10V, ID = 7AThe FDFS6N548 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low Max rDS(on) = 30m at VGS = 4.5V, ID = 6Aforward voltage drop Schottky barrier rectifier in an SO-

..2. Size:324K onsemi
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FDFS6N548Integrated N-ChannelPOWERTRENCH MOSFETand Schottky DiodeDescriptionThe FDFS6N548 combines the exceptional performance ofwww.onsemi.comON Semiconductors PowerTrench MOSFET technology with a verylow forward voltage drop Schottky barrier rectifier in an SO-8 package.This device is designed specifically as a single package solution forDDDC to DC converters. It

8.1. Size:64K fairchild semi
fdfs6n303.pdf pdf_icon

October 2003 FDFS6N303 N-Channel MOSFET with Schottky Diode General Description FeaturesThe FDFS6N303 incorporates a high cell density MOSFET 6 A, 30 V. RDS(ON) = 0.035 @ VGS = 10 V.and low forward drop (0.35V) Schottky diode into a single R = 0.055 @ VGS = 4.5 V.DS(ON)surface mount power package. The MOSFET and SchottkyVF

8.2. Size:500K fairchild semi
fdfs6n754.pdf pdf_icon

Final DatasheetAugust 2014FDFS6N754Integrated N-Channel PowerTrench MOSFET and Schottky Diode30V, 4A, 56mFeatures General Description Max rDS(on) = 56m at VGS = 0V, ID = 4AThe FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very Max rDS(on) = 75m at VGS = 4.5V, ID = 3.5Alow forward voltage drop Schottky barrier re

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