FDJ127P Specs and Replacement
Type Designator: FDJ127P
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SC75-6FLMP
FDJ127P substitution
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FDJ127P datasheet
fdj127p.pdf
July 2004 FDJ127P P-Channel -1.8 Vgs Specified PowerTrench MOSFET General Description Features This P-Channel -1.8V specified MOSFET uses 4.1 A, 20 V. RDS(ON) = 60 m @ VGS = 4.5 V Fairchild s advanced low voltage Power Trench RDS(ON) = 85 m @ VGS = 2.5 V process. It has been optimized for battery power RDS(ON) = 133 m @ VGS = 1.8 V management ... See More ⇒
fdj128n fdj128n f077.pdf
August 2004 FDJ128N N-Channel 2.5 Vgs Specified PowerTrench MOSFET General Description Features This N-Channel -2.5V specified MOSFET uses 5.5 A, 20 V. RDS(ON) = 35 m @ VGS = 4.5 V Fairchild s advanced low voltage PowerTrench process. RDS(ON) = 51 m @ VGS = 2.5 V It has been optimized for battery power management applications. Low gate charge Application... See More ⇒
fdj129p.pdf
November 2007 tm FDJ129P P-Channel -2.5 Vgs Specified PowerTrench MOSFET General Description Features This P-Channel -2.5V specified MOSFET uses 4.2 A, 20 V. RDS(ON) = 70 m @ VGS = 4.5 V Fairchild s advanced low voltage PowerTrench process. RDS(ON) = 120 m @ VGS = 2.5 V It has been optimized for battery power management applications. Low gate ch... See More ⇒
Detailed specifications: FDH50N50F133, FDH5500, FDI025N06, FDI047AN08A0, FDI2532, FDI33N25, FDI3652, FDI8442, 2N60, FDJ128N, FDJ128NF077, FDJ129P, FDM100-0045SP, FDM21-05QC, FDM606P, FDM6296, FDMA1430JP
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