All MOSFET. IRFPE30 Datasheet

 

IRFPE30 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFPE30

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 4.1 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 78 nC

Maximum Drain-Source On-State Resistance (Rds): 3 Ohm

Package: TO3P

IRFPE30 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFPE30 Datasheet (PDF)

1.1. irfpe30pbf.pdf Size:1518K _upd-mosfet

IRFPE30
IRFPE30

IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rated VDS (V) 800 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 3.0 RoHS* • Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling Qgd (nC) 45 • Simple Drive Requirements Configuration Single • Lead (P

1.2. irfpe30.pdf Size:165K _international_rectifier

IRFPE30
IRFPE30

 1.3. irfpe30 sihfpe30.pdf Size:1520K _vishay

IRFPE30
IRFPE30

IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 3.0 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 78 Fast Switching Qgs (nC) 9.6 Ease of Paralleling Qgd (nC) 45 Simple Drive Requirements Configuration Single Compliant to RoHS Directiv

Datasheet: IRFPC30 , IRFPC40 , IRFPC48 , IRFPC50 , IRFPC50A , IRFPC50LC , IRFPC60 , IRFPC60LC , 2SK3878 , IRFPE40 , IRFPE50 , IRFPF30 , IRFPF40 , IRFPF50 , IRFPG30 , IRFPG40 , IRFPG50 .

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