IRFPE30. Аналоги и основные параметры
Наименование производителя: IRFPE30
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.1 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 33 ns
Cossⓘ - Выходная емкость: 310 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm
Тип корпуса: TO247AC
Аналог (замена) для IRFPE30
- подборⓘ MOSFET транзистора по параметрам
IRFPE30 даташит
..2. Size:1518K vishay
irfpe30pbf.pdf 
IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 78 Fast Switching Qgs (nC) 9.6 Ease of Paralleling Qgd (nC) 45 Simple Drive Requirements Configuration Single Lead (P
..3. Size:1520K vishay
irfpe30 sihfpe30.pdf 
IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 78 Fast Switching Qgs (nC) 9.6 Ease of Paralleling Qgd (nC) 45 Simple Drive Requirements Configuration Single Complian
..4. Size:1525K infineon
irfpe30 sihfpe30.pdf 
IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 78 Fast Switching Qgs (nC) 9.6 Ease of Paralleling Qgd (nC) 45 Simple Drive Requirements Configuration Single Complian
9.1. Size:871K international rectifier
irfpe40.pdf 
PD - 94890 IRFPE40PbF Lead-Free 12/15/03 Document Number 91247 www.vishay.com 1 IRFPE40PbF Document Number 91247 www.vishay.com 2 IRFPE40PbF Document Number 91247 www.vishay.com 3 IRFPE40PbF Document Number 91247 www.vishay.com 4 IRFPE40PbF Document Number 91247 www.vishay.com 5 IRFPE40PbF Document Number 91247 www.vishay.com 6 IRFPE40PbF TO-247AC Package O
9.2. Size:852K international rectifier
irfpe50.pdf 
PD - 94845 IRFPE50PbF Lead-Free 11/14/03 Document Number 91248 www.vishay.com 1 IRFPE50PbF Document Number 91248 www.vishay.com 2 IRFPE50PbF Document Number 91248 www.vishay.com 3 IRFPE50PbF Document Number 91248 www.vishay.com 4 IRFPE50PbF Document Number 91248 www.vishay.com 5 IRFPE50PbF Document Number 91248 www.vishay.com 6 IRFPE50PbF TO-247AC Package O
9.3. Size:1575K vishay
irfpe50pbf.pdf 
IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.2 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 200 COMPLIANT Fast Switching Qgs (nC) 24 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements Complian
9.4. Size:1610K vishay
irfpe50 sihfpe50.pdf 
IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.2 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 200 COMPLIANT Fast Switching Qgs (nC) 24 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements Complian
9.5. Size:1490K vishay
irfpe40pbf.pdf 
IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 2.0 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 130 COMPLIANT Fast Switching Qgs (nC) 17 Qgd (nC) 72 Ease of Paralleling Configuration Single Simple Drive Requirements D Lea
9.6. Size:830K vishay
irfpe40.pdf 
IRFPE40 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating VDS (V) 800 Repetitive avalanche rated RDS(on) ( )VGS = 10 V 2.0 Isolated central mounting hole Qg (Max.) (nC) 130 Fast switching Qgs (nC) 17 Qgd (nC) 72 Ease of paralleling Configuration Single Simple drive requirements D Material categorization fo
9.7. Size:1525K vishay
irfpe40 sihfpe40.pdf 
IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 2.0 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 130 COMPLIANT Fast Switching Qgs (nC) 17 Qgd (nC) 72 Ease of Paralleling Configuration Single Simple Drive Requirements D Complia
9.8. Size:1615K infineon
irfpe50 sihfpe50.pdf 
IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.2 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 200 COMPLIANT Fast Switching Qgs (nC) 24 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements Complian
9.9. Size:1530K infineon
irfpe40 sihfpe40.pdf 
IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 2.0 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 130 COMPLIANT Fast Switching Qgs (nC) 17 Qgd (nC) 72 Ease of Paralleling Configuration Single Simple Drive Requirements D Complia
9.10. Size:252K inchange semiconductor
irfpe40.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFPE40 FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol
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