All MOSFET. FDMA86108LZ Datasheet

 

FDMA86108LZ Datasheet and Replacement


   Type Designator: FDMA86108LZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1.7 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.243 Ohm
   Package: MICROFET2X2
 

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FDMA86108LZ Datasheet (PDF)

 ..1. Size:449K  fairchild semi
fdma86108lz.pdf pdf_icon

FDMA86108LZ

March 2015FDMA86108LZSingle N-Channel PowerTrench MOSFET100 V, 2.2 A, 243 mFeatures General Description Max rDS(on) = 243 m at VGS = 10 V, ID = 2.2 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 366 m at VGS = 4.5 V, ID = 1.8 Alow rDS(on) and gate charge provide excellent switching

 7.1. Size:559K  fairchild semi
fdma86151l.pdf pdf_icon

FDMA86108LZ

September 2014FDMA86151LSingle N-Channel PowerTrench MOSFET100 V, 3.3 A, 88 mFeatures General Description Max rDS(on) = 88 m at VGS = 10 V, ID = 3.3 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 132 m at VGS = 4.5 V, ID = 2.7 Alow rDS(on) and gate charge provide excellent switchin

 8.1. Size:505K  fairchild semi
fdma86251.pdf pdf_icon

FDMA86108LZ

March 2015FDMA86251Single N-Channel PowerTrench MOSFET150 V, 2.4 A, 175 mFeatures General Description Max rDS(on) = 175 m at VGS = 10 V, ID = 2.4 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 237 m at VGS = 6 V, ID = 2.0 Alow rDS(on) and gate charge provide excellent switching

 8.2. Size:296K  fairchild semi
fdma86265p.pdf pdf_icon

FDMA86108LZ

May 2014FDMA86265PP-Channel PowerTrench MOSFET -150 V, -1 A, 1.2 Features General Description Max rDS(on) = 1.2 at VGS = -10 V, ID = -1 A This P-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max rDS(on) = 1.4 at VGS = -6 V, ID = -0.9 Ahas been optimized for the on-state resistance and yet maintain Low Profile - 0.8 m

Datasheet: FDJ128NF077 , FDJ129P , FDM100-0045SP , FDM21-05QC , FDM606P , FDM6296 , FDMA1430JP , FDMA6676PZ , STP65NF06 , FDMA86251 , FDMB506P , FDMC6688P , FDMC8010ET30 , FDMC86160ET100 , FDMC86260ET150 , FDMC86262P , FDMC86340ET80 .

History: TTP145N08A | AP2761R-A | TTP115N08AA | TK30A06J3A | AP2762S-A-HF | JCS1SN60TC | TK40A10J1

Keywords - FDMA86108LZ MOSFET datasheet

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