FDMA86108LZ Specs and Replacement

Type Designator: FDMA86108LZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1.7 nS

Cossⓘ - Output Capacitance: 23 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.243 Ohm

Package: MICROFET2X2

FDMA86108LZ substitution

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FDMA86108LZ datasheet

 ..1. Size:449K  fairchild semi
fdma86108lz.pdf pdf_icon

FDMA86108LZ

March 2015 FDMA86108LZ Single N-Channel PowerTrench MOSFET 100 V, 2.2 A, 243 m Features General Description Max rDS(on) = 243 m at VGS = 10 V, ID = 2.2 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 366 m at VGS = 4.5 V, ID = 1.8 A low rDS(on) and gate charge provide excellent switching... See More ⇒

 7.1. Size:559K  fairchild semi
fdma86151l.pdf pdf_icon

FDMA86108LZ

September 2014 FDMA86151L Single N-Channel PowerTrench MOSFET 100 V, 3.3 A, 88 m Features General Description Max rDS(on) = 88 m at VGS = 10 V, ID = 3.3 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 132 m at VGS = 4.5 V, ID = 2.7 A low rDS(on) and gate charge provide excellent switchin... See More ⇒

 8.1. Size:505K  fairchild semi
fdma86251.pdf pdf_icon

FDMA86108LZ

March 2015 FDMA86251 Single N-Channel PowerTrench MOSFET 150 V, 2.4 A, 175 m Features General Description Max rDS(on) = 175 m at VGS = 10 V, ID = 2.4 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 237 m at VGS = 6 V, ID = 2.0 A low rDS(on) and gate charge provide excellent switching ... See More ⇒

 8.2. Size:296K  fairchild semi
fdma86265p.pdf pdf_icon

FDMA86108LZ

May 2014 FDMA86265P P-Channel PowerTrench MOSFET -150 V, -1 A, 1.2 Features General Description Max rDS(on) = 1.2 at VGS = -10 V, ID = -1 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 1.4 at VGS = -6 V, ID = -0.9 A has been optimized for the on-state resistance and yet maintain Low Profile - 0.8 m... See More ⇒

Detailed specifications: FDJ128NF077, FDJ129P, FDM100-0045SP, FDM21-05QC, FDM606P, FDM6296, FDMA1430JP, FDMA6676PZ, IRFZ46N, FDMA86251, FDMB506P, FDMC6688P, FDMC8010ET30, FDMC86160ET100, FDMC86260ET150, FDMC86262P, FDMC86340ET80

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