Справочник MOSFET. FDMA86108LZ

 

FDMA86108LZ Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDMA86108LZ
   Маркировка: 108
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.4 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 1.7 ns
   Cossⓘ - Выходная емкость: 23 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.243 Ohm
   Тип корпуса: MICROFET2X2
     - подбор MOSFET транзистора по параметрам

 

FDMA86108LZ Datasheet (PDF)

 ..1. Size:449K  fairchild semi
fdma86108lz.pdfpdf_icon

FDMA86108LZ

March 2015FDMA86108LZSingle N-Channel PowerTrench MOSFET100 V, 2.2 A, 243 mFeatures General Description Max rDS(on) = 243 m at VGS = 10 V, ID = 2.2 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 366 m at VGS = 4.5 V, ID = 1.8 Alow rDS(on) and gate charge provide excellent switching

 7.1. Size:559K  fairchild semi
fdma86151l.pdfpdf_icon

FDMA86108LZ

September 2014FDMA86151LSingle N-Channel PowerTrench MOSFET100 V, 3.3 A, 88 mFeatures General Description Max rDS(on) = 88 m at VGS = 10 V, ID = 3.3 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 132 m at VGS = 4.5 V, ID = 2.7 Alow rDS(on) and gate charge provide excellent switchin

 8.1. Size:505K  fairchild semi
fdma86251.pdfpdf_icon

FDMA86108LZ

March 2015FDMA86251Single N-Channel PowerTrench MOSFET150 V, 2.4 A, 175 mFeatures General Description Max rDS(on) = 175 m at VGS = 10 V, ID = 2.4 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 237 m at VGS = 6 V, ID = 2.0 Alow rDS(on) and gate charge provide excellent switching

 8.2. Size:296K  fairchild semi
fdma86265p.pdfpdf_icon

FDMA86108LZ

May 2014FDMA86265PP-Channel PowerTrench MOSFET -150 V, -1 A, 1.2 Features General Description Max rDS(on) = 1.2 at VGS = -10 V, ID = -1 A This P-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max rDS(on) = 1.4 at VGS = -6 V, ID = -0.9 Ahas been optimized for the on-state resistance and yet maintain Low Profile - 0.8 m

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: HAT2210R | P0804BD

 

 
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