FDMA86251
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDMA86251
Marking Code: 251
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 2.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 1.7
nS
Cossⓘ -
Output Capacitance: 24
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.175
Ohm
Package: MICROFET2X2
FDMA86251
Datasheet (PDF)
..1. Size:505K fairchild semi
fdma86251.pdf 
March 2015FDMA86251Single N-Channel PowerTrench MOSFET150 V, 2.4 A, 175 mFeatures General Description Max rDS(on) = 175 m at VGS = 10 V, ID = 2.4 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 237 m at VGS = 6 V, ID = 2.0 Alow rDS(on) and gate charge provide excellent switching
7.1. Size:296K fairchild semi
fdma86265p.pdf
May 2014FDMA86265PP-Channel PowerTrench MOSFET -150 V, -1 A, 1.2 Features General Description Max rDS(on) = 1.2 at VGS = -10 V, ID = -1 A This P-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max rDS(on) = 1.4 at VGS = -6 V, ID = -0.9 Ahas been optimized for the on-state resistance and yet maintain Low Profile - 0.8 m
7.2. Size:888K onsemi
fdma86265p.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
8.1. Size:449K fairchild semi
fdma86108lz.pdf
March 2015FDMA86108LZSingle N-Channel PowerTrench MOSFET100 V, 2.2 A, 243 mFeatures General Description Max rDS(on) = 243 m at VGS = 10 V, ID = 2.2 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 366 m at VGS = 4.5 V, ID = 1.8 Alow rDS(on) and gate charge provide excellent switching
8.2. Size:559K fairchild semi
fdma86151l.pdf
September 2014FDMA86151LSingle N-Channel PowerTrench MOSFET100 V, 3.3 A, 88 mFeatures General Description Max rDS(on) = 88 m at VGS = 10 V, ID = 3.3 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 132 m at VGS = 4.5 V, ID = 2.7 Alow rDS(on) and gate charge provide excellent switchin
8.3. Size:374K fairchild semi
fdma86551l.pdf
October 2014FDMA86551LSingle N-Channel PowerTrench MOSFET60 V, 7.5 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7.5 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 35 m at VGS = 4.5 V, ID = 6 Alow rDS(on) and gate charge provide excellent switching L
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
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