Справочник MOSFET. FDMA86251

 

FDMA86251 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDMA86251
   Маркировка: 251
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.4 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 1.7 ns
   Cossⓘ - Выходная емкость: 24 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.175 Ohm
   Тип корпуса: MICROFET2X2

 Аналог (замена) для FDMA86251

 

 

FDMA86251 Datasheet (PDF)

 ..1. Size:505K  fairchild semi
 fdma86251.pdf

FDMA86251 FDMA86251

March 2015FDMA86251Single N-Channel PowerTrench MOSFET150 V, 2.4 A, 175 mFeatures General Description Max rDS(on) = 175 m at VGS = 10 V, ID = 2.4 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 237 m at VGS = 6 V, ID = 2.0 Alow rDS(on) and gate charge provide excellent switching

 7.1. Size:296K  fairchild semi
 fdma86265p.pdf

FDMA86251 FDMA86251

May 2014FDMA86265PP-Channel PowerTrench MOSFET -150 V, -1 A, 1.2 Features General Description Max rDS(on) = 1.2 at VGS = -10 V, ID = -1 A This P-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max rDS(on) = 1.4 at VGS = -6 V, ID = -0.9 Ahas been optimized for the on-state resistance and yet maintain Low Profile - 0.8 m

 7.2. Size:888K  onsemi
 fdma86265p.pdf

FDMA86251 FDMA86251

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:449K  fairchild semi
 fdma86108lz.pdf

FDMA86251 FDMA86251

March 2015FDMA86108LZSingle N-Channel PowerTrench MOSFET100 V, 2.2 A, 243 mFeatures General Description Max rDS(on) = 243 m at VGS = 10 V, ID = 2.2 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 366 m at VGS = 4.5 V, ID = 1.8 Alow rDS(on) and gate charge provide excellent switching

 8.2. Size:559K  fairchild semi
 fdma86151l.pdf

FDMA86251 FDMA86251

September 2014FDMA86151LSingle N-Channel PowerTrench MOSFET100 V, 3.3 A, 88 mFeatures General Description Max rDS(on) = 88 m at VGS = 10 V, ID = 3.3 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 132 m at VGS = 4.5 V, ID = 2.7 Alow rDS(on) and gate charge provide excellent switchin

 8.3. Size:374K  fairchild semi
 fdma86551l.pdf

FDMA86251 FDMA86251

October 2014FDMA86551LSingle N-Channel PowerTrench MOSFET60 V, 7.5 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7.5 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 35 m at VGS = 4.5 V, ID = 6 Alow rDS(on) and gate charge provide excellent switching L

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History: NCE4435X

 

 
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