FDMC8010ET30
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDMC8010ET30
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 65
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 174
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 67
nC
trⓘ - Rise Time: 7.5
nS
Cossⓘ -
Output Capacitance: 1570
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0013
Ohm
Package:
POWER33
FDMC8010ET30
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDMC8010ET30
Datasheet (PDF)
..1. Size:413K fairchild semi
fdmc8010et30.pdf 
January 2015FDMC8010ET30N-Channel PowerTrench MOSFET30 V, 174 A, 1.3 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175CSemiconductors advanced PowerTrench process that has Max rDS(on) = 1.3 m at VGS = 10 V, ID = 30 Abeen especially tailored to minimize the on-state resistance. This device is well suited for
6.1. Size:545K fairchild semi
fdmc8010.pdf
December 2014FDMC8010N-Channel PowerTrench MOSFET 30 V, 75 A, 1.3 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.3 m at VGS = 10 V, ID = 30 ASemiconductors advanced PowerTrench process that has Max rDS(on) = 1.8 m at VGS = 4.5 V, ID = 25 Abeen especially tailored to minimize the on-state resistance. This device is
6.2. Size:561K onsemi
fdmc8010.pdf
FDMC8010MOSFET N-Channel,POWERTRENCH)30 V, 75 A, 1.3 mWGeneral Descriptionwww.onsemi.comThis N-Channel MOSFET is produced using ON Semiconductorsadvanced POWERTRENCH process that has been especially tailoredPin 1Pin 1SSto minimize the on-state resistance. This device is well suited forSGapplications where ultra low rDS(on) is required in small spaces such as
6.3. Size:327K onsemi
fdmc8010dc.pdf
FDMC8010DCMOSFET N-Channel, DUAL COOL) 33,POWERTRENCH)30 V, 157 A, 1.28 mWwww.onsemi.comGeneral DescriptionThis N-Channel MOSFET is produced using ON Semiconductors DDDDadvanced POWERTRENCH process. Advancements in both siliconand DUAL COOL package technologies have been combined to offerGSthe lowest rDS(on) while maintaining excellent switching performanceS
Datasheet: FQT7N10L
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