FDMC8010ET30 Specs and Replacement

Type Designator: FDMC8010ET30

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 174 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.5 nS

Cossⓘ - Output Capacitance: 1570 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0013 Ohm

Package: POWER33

FDMC8010ET30 substitution

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FDMC8010ET30 datasheet

 ..1. Size:413K  fairchild semi
 fdmc8010et30.pdf pdf_icon

FDMC8010ET30

January 2015 FDMC8010ET30 N-Channel PowerTrench MOSFET 30 V, 174 A, 1.3 m Features General Description This N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175 C Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1.3 m at VGS = 10 V, ID = 30 A been especially tailored to minimize the on-state resistance. This device is well suited for... See More ⇒

 6.1. Size:545K  fairchild semi
 fdmc8010.pdf pdf_icon

FDMC8010ET30

December 2014 FDMC8010 N-Channel PowerTrench MOSFET 30 V, 75 A, 1.3 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.3 m at VGS = 10 V, ID = 30 A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1.8 m at VGS = 4.5 V, ID = 25 A been especially tailored to minimize the on-state resistance. This device is... See More ⇒

 6.2. Size:561K  onsemi
 fdmc8010.pdf pdf_icon

FDMC8010ET30

FDMC8010 MOSFET N-Channel, POWERTRENCH) 30 V, 75 A, 1.3 mW General Description www.onsemi.com This N-Channel MOSFET is produced using ON Semiconductor s advanced POWERTRENCH process that has been especially tailored Pin 1 Pin 1 S S to minimize the on-state resistance. This device is well suited for S G applications where ultra low rDS(on) is required in small spaces such as... See More ⇒

 6.3. Size:327K  onsemi
 fdmc8010dc.pdf pdf_icon

FDMC8010ET30

FDMC8010DC MOSFET N-Channel, DUAL COOL) 33, POWERTRENCH) 30 V, 157 A, 1.28 mW www.onsemi.com General Description This N-Channel MOSFET is produced using ON Semiconductor s DD D D advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer G S the lowest rDS(on) while maintaining excellent switching performance S... See More ⇒

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Detailed specifications: FDM606P, FDM6296, FDMA1430JP, FDMA6676PZ, FDMA86108LZ, FDMA86251, FDMB506P, FDMC6688P, IRFB7545, FDMC86160ET100, FDMC86260ET150, FDMC86262P, FDMC86340ET80, FDMC86570LET60, FDMC8676, FDMC8678S, FDMD85100

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