FDMC8010ET30. Аналоги и основные параметры

Наименование производителя: FDMC8010ET30

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 65 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 174 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 7.5 ns

Cossⓘ - Выходная емкость: 1570 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0013 Ohm

Тип корпуса: POWER33

Аналог (замена) для FDMC8010ET30

- подборⓘ MOSFET транзистора по параметрам

 

FDMC8010ET30 даташит

 ..1. Size:413K  fairchild semi
 fdmc8010et30.pdf pdf_icon

FDMC8010ET30

January 2015 FDMC8010ET30 N-Channel PowerTrench MOSFET 30 V, 174 A, 1.3 m Features General Description This N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175 C Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1.3 m at VGS = 10 V, ID = 30 A been especially tailored to minimize the on-state resistance. This device is well suited for

 6.1. Size:545K  fairchild semi
 fdmc8010.pdf pdf_icon

FDMC8010ET30

December 2014 FDMC8010 N-Channel PowerTrench MOSFET 30 V, 75 A, 1.3 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.3 m at VGS = 10 V, ID = 30 A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1.8 m at VGS = 4.5 V, ID = 25 A been especially tailored to minimize the on-state resistance. This device is

 6.2. Size:561K  onsemi
 fdmc8010.pdf pdf_icon

FDMC8010ET30

FDMC8010 MOSFET N-Channel, POWERTRENCH) 30 V, 75 A, 1.3 mW General Description www.onsemi.com This N-Channel MOSFET is produced using ON Semiconductor s advanced POWERTRENCH process that has been especially tailored Pin 1 Pin 1 S S to minimize the on-state resistance. This device is well suited for S G applications where ultra low rDS(on) is required in small spaces such as

 6.3. Size:327K  onsemi
 fdmc8010dc.pdf pdf_icon

FDMC8010ET30

FDMC8010DC MOSFET N-Channel, DUAL COOL) 33, POWERTRENCH) 30 V, 157 A, 1.28 mW www.onsemi.com General Description This N-Channel MOSFET is produced using ON Semiconductor s DD D D advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer G S the lowest rDS(on) while maintaining excellent switching performance S

ПОКАЗАТЬ ЕЩЁ

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