Справочник MOSFET. FDMC8010ET30

 

FDMC8010ET30 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDMC8010ET30
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 65 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 174 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 7.5 ns
   Cossⓘ - Выходная емкость: 1570 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0013 Ohm
   Тип корпуса: POWER33

 Аналог (замена) для FDMC8010ET30

 

 

FDMC8010ET30 Datasheet (PDF)

 ..1. Size:413K  fairchild semi
fdmc8010et30.pdf

FDMC8010ET30
FDMC8010ET30

January 2015FDMC8010ET30N-Channel PowerTrench MOSFET30 V, 174 A, 1.3 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175CSemiconductors advanced PowerTrench process that has Max rDS(on) = 1.3 m at VGS = 10 V, ID = 30 Abeen especially tailored to minimize the on-state resistance. This device is well suited for

 6.1. Size:545K  fairchild semi
fdmc8010.pdf

FDMC8010ET30
FDMC8010ET30

December 2014FDMC8010N-Channel PowerTrench MOSFET 30 V, 75 A, 1.3 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.3 m at VGS = 10 V, ID = 30 ASemiconductors advanced PowerTrench process that has Max rDS(on) = 1.8 m at VGS = 4.5 V, ID = 25 Abeen especially tailored to minimize the on-state resistance. This device is

 6.2. Size:561K  onsemi
fdmc8010.pdf

FDMC8010ET30
FDMC8010ET30

FDMC8010MOSFET N-Channel,POWERTRENCH)30 V, 75 A, 1.3 mWGeneral Descriptionwww.onsemi.comThis N-Channel MOSFET is produced using ON Semiconductorsadvanced POWERTRENCH process that has been especially tailoredPin 1Pin 1SSto minimize the on-state resistance. This device is well suited forSGapplications where ultra low rDS(on) is required in small spaces such as

 6.3. Size:327K  onsemi
fdmc8010dc.pdf

FDMC8010ET30
FDMC8010ET30

FDMC8010DCMOSFET N-Channel, DUAL COOL) 33,POWERTRENCH)30 V, 157 A, 1.28 mWwww.onsemi.comGeneral DescriptionThis N-Channel MOSFET is produced using ON Semiconductors DDDDadvanced POWERTRENCH process. Advancements in both siliconand DUAL COOL package technologies have been combined to offerGSthe lowest rDS(on) while maintaining excellent switching performanceS

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