All MOSFET. FDMS0308CS Datasheet

 

FDMS0308CS MOSFET. Datasheet pdf. Equivalent

Type Designator: FDMS0308CS

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 65 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 42 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 6 nS

Drain-Source Capacitance (Cd): 1175 pF

Maximum Drain-Source On-State Resistance (Rds): 0.003 Ohm

Package: Power56

FDMS0308CS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDMS0308CS Datasheet (PDF)

1.1. fdms0308cs.pdf Size:195K _upd-mosfet

FDMS0308CS
FDMS0308CS

August 2010 FDMS0308CS N-Channel PowerTrench® SyncFETTM 30 V, 42 A, 3 m Features General Description The FDMS0308CS has been designed to minimize losses in Max rDS(on) = 3.0 m at VGS = 10 V, ID = 21 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 17 A package technologies have been combined to offer the lowest Advanc

2.1. fdms0308as.pdf Size:294K _fairchild_semi

FDMS0308CS
FDMS0308CS

October 2014 FDMS0308AS N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 2.8 mΩ Features General Description The FDMS0308AS has been designed to minimize losses in Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 24 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 21 A package technologies have been combined to offer the lowest rD

 3.1. fdms0302s.pdf Size:468K _fairchild_semi

FDMS0308CS
FDMS0308CS

October 2014 FDMS0302S N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description The FDMS0302S has been designed to minimize losses in Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 28 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 23 A package technologies have been combined to offer the lowest

3.2. fdms030n06b.pdf Size:1403K _fairchild_semi

FDMS0308CS
FDMS0308CS

November 2013 FDMS030N06B N-Channel PowerTrench® MOSFET 60 V, 100 A, 3 mΩ Features Description • RDS(on) = 2.4 mΩ (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild • Advanced Package and Silicon Combination for Low RDS(on) Semiconductor’s advance PowerTrench® process that has and High Efficiency been tailored to minimize the on-state resistance wh

 3.3. fdms0306as.pdf Size:288K _fairchild_semi

FDMS0308CS
FDMS0308CS

January 2015 FDMS0306AS N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 2.4 mΩ Features General Description The FDMS0306AS has been designed to minimize losses in Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 26 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.0 mΩ at VGS = 4.5 V, ID = 23 A package technologies have been combined to offer the lowest rD

3.4. fdms0300s.pdf Size:272K _fairchild_semi

FDMS0308CS
FDMS0308CS

October 2014 FDMS0300S N-Channel PowerTrench® SyncFET™ 30 V, 49 A, 1.8 mΩ Features General Description The FDMS0300S has been designed to minimize losses in Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 25 A package technologies have been combined to offer the lowest

 3.5. fdms0309as.pdf Size:309K _fairchild_semi

FDMS0308CS
FDMS0308CS

January 2015 FDMS0309AS N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 3.5 mΩ Features General Description The FDMS0309AS has been designed to minimize losses in Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 21 A power conversion application. Advancements in both silicon and Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A package technologies have been combined to offer the lowest rD

Datasheet: FDMC86340ET80 , FDMC86570LET60 , FDMC8676 , FDMC8678S , FDMD85100 , FDMD86100 , FDMD8900 , FDME0106NZT , IRF3205 , FDMS8050ET30 , FDMS86150ET100 , FDMS86202ET120 , FDMS86255ET150 , FDMS86350ET80 , FDMS86369_F085 , FDMS86550ET60 , FDMS86568_F085 .

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