FDMS0308CS Datasheet and Replacement

August 2010FDMS0308CSN-Channel PowerTrench SyncFETTM 30 V, 42 A, 3 m Features General DescriptionThe FDMS0308CS has been designed to minimize losses in Max rDS(on) = 3.0 m at VGS = 10 V, ID = 21 Apower conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 17 Apackage technologies have been combined to offer the lowest Advanc

October 2014FDMS0308ASN-Channel PowerTrench SyncFETTM30 V, 49 A, 2.8 mFeatures General DescriptionThe FDMS0308AS has been designed to minimize losses in Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 Apower conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 Apackage technologies have been combined to offer the lowest rD

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

January 2015FDMS0306ASN-Channel PowerTrench SyncFETTM30 V, 49 A, 2.4 mFeatures General DescriptionThe FDMS0306AS has been designed to minimize losses in Max rDS(on) = 2.4 m at VGS = 10 V, ID = 26 Apower conversion application. Advancements in both silicon and Max rDS(on) = 3.0 m at VGS = 4.5 V, ID = 23 Apackage technologies have been combined to offer the lowest rD

November 2013FDMS030N06BN-Channel PowerTrench MOSFET60 V, 100 A, 3 mFeatures Description RDS(on) = 2.4 m (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Advanced Package and Silicon Combination for Low RDS(on) Semiconductors advance PowerTrench process that hasand High Efficiency been tailored to minimize the on-state resistance wh

January 2015FDMS0309ASN-Channel PowerTrench SyncFETTM30 V, 49 A, 3.5 mFeatures General DescriptionThe FDMS0309AS has been designed to minimize losses in Max rDS(on) = 3.5 m at VGS = 10 V, ID = 21 Apower conversion application. Advancements in both silicon and Max rDS(on) = 4.3 m at VGS = 4.5 V, ID = 19 Apackage technologies have been combined to offer the lowest rD

October 2014FDMS0300SN-Channel PowerTrench SyncFET 30 V, 49 A, 1.8 mFeatures General DescriptionThe FDMS0300S has been designed to minimize losses in Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.0 m at VGS = 4.5 V, ID = 25 Apackage technologies have been combined to offer the lowest

October 2014FDMS0302SN-Channel PowerTrench SyncFETTM30 V, 49 A, 1.9 mFeatures General DescriptionThe FDMS0302S has been designed to minimize losses in Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 23 Apackage technologies have been combined to offer the lowest