All MOSFET. FDN86501LZ Datasheet

 

FDN86501LZ Datasheet and Replacement


   Type Designator: FDN86501LZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1.2 nS
   Cossⓘ - Output Capacitance: 77 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.116 Ohm
   Package: SSOT-3
 

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FDN86501LZ Datasheet (PDF)

 ..1. Size:683K  fairchild semi
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FDN86501LZ

April 2015FDN86501LZN-Channel Shielded Gate PowerTrench MOSFET60 V, 2.6 A, 116 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 116 m at VGS = 10 V, ID = 2.6 Aincorporates Shielded Gate technology. This process has been optimized for rDS(on),

 ..2. Size:717K  onsemi
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FDN86501LZ

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:270K  fairchild semi
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FDN86501LZ

May 2014FDN86265PP-Channel PowerTrench MOSFET -150 V, -0.8 A, 1.2 Features General DescriptionThis P-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.2 at VGS = -10 V, ID = -0.8 ASemiconductors advanced PowerTrench process that has Max rDS(on) = 1.4 at VGS = -6 V, ID = -0.7 Abeen optimized for the on-state resistance and yet maintain superior switch

 9.2. Size:158K  fairchild semi
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FDN86501LZ

July 2010FDN8601N-Channel PowerTrench MOSFET 100 V, 2.7 A, 109 m Features General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 109 m at VGS = 10 V, ID = 1.5 ASemiconductors advanced Power Trench process that has Max rDS(on) = 175 m at VGS = 6 V, ID = 1.2 Abeen optimized for rDS(on), switching performance and ruggedness. High perform

Datasheet: FDMS8690 , FDMS8692 , FDMS9408F085 , FDMT800100DC , FDMT800150DC , FDMT800152DC , FDN336P-NL , FDN359BNF095 , 2SK3878 , FDP020N06BF102 , FDP10AN06A0 , FDP120AN15A0 , FDP13AN06A0 , FDP14AN06LA0 , FDP15N50 , FDP15N65 , FDP16N50 .

History: FDD6N20TF | P2610BT | DMN3035LWN | AP6800GEO | IRF7822PBF | IPB34CN10N | FQD2N50TF

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