FDN86501LZ Datasheet and Replacement
Type Designator: FDN86501LZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 1.2 nS
Cossⓘ - Output Capacitance: 77 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.116 Ohm
Package: SSOT-3
FDN86501LZ substitution
FDN86501LZ Datasheet (PDF)
fdn86501lz.pdf

April 2015FDN86501LZN-Channel Shielded Gate PowerTrench MOSFET60 V, 2.6 A, 116 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 116 m at VGS = 10 V, ID = 2.6 Aincorporates Shielded Gate technology. This process has been optimized for rDS(on),
fdn86501lz.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdn86265p.pdf

May 2014FDN86265PP-Channel PowerTrench MOSFET -150 V, -0.8 A, 1.2 Features General DescriptionThis P-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.2 at VGS = -10 V, ID = -0.8 ASemiconductors advanced PowerTrench process that has Max rDS(on) = 1.4 at VGS = -6 V, ID = -0.7 Abeen optimized for the on-state resistance and yet maintain superior switch
fdn8601.pdf

July 2010FDN8601N-Channel PowerTrench MOSFET 100 V, 2.7 A, 109 m Features General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 109 m at VGS = 10 V, ID = 1.5 ASemiconductors advanced Power Trench process that has Max rDS(on) = 175 m at VGS = 6 V, ID = 1.2 Abeen optimized for rDS(on), switching performance and ruggedness. High perform
Datasheet: FDMS8690 , FDMS8692 , FDMS9408F085 , FDMT800100DC , FDMT800150DC , FDMT800152DC , FDN336P-NL , FDN359BNF095 , 2SK3878 , FDP020N06BF102 , FDP10AN06A0 , FDP120AN15A0 , FDP13AN06A0 , FDP14AN06LA0 , FDP15N50 , FDP15N65 , FDP16N50 .
History: FDD6N20TF | P2610BT | DMN3035LWN | AP6800GEO | IRF7822PBF | IPB34CN10N | FQD2N50TF
Keywords - FDN86501LZ MOSFET datasheet
FDN86501LZ cross reference
FDN86501LZ equivalent finder
FDN86501LZ lookup
FDN86501LZ substitution
FDN86501LZ replacement
History: FDD6N20TF | P2610BT | DMN3035LWN | AP6800GEO | IRF7822PBF | IPB34CN10N | FQD2N50TF



LIST
Last Update
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
2n3440 | bc550c | 2n3904 transistor datasheet | p75nf75 | d880 transistor | 2sc1845 | p60nf06 | 2sa1837