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FDN86501LZ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDN86501LZ
   Маркировка: 8650
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 3.8 nC
   trⓘ - Время нарастания: 1.2 ns
   Cossⓘ - Выходная емкость: 77 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.116 Ohm
   Тип корпуса: SSOT-3

 Аналог (замена) для FDN86501LZ

 

 

FDN86501LZ Datasheet (PDF)

 ..1. Size:683K  fairchild semi
 fdn86501lz.pdf

FDN86501LZ FDN86501LZ

April 2015FDN86501LZN-Channel Shielded Gate PowerTrench MOSFET60 V, 2.6 A, 116 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 116 m at VGS = 10 V, ID = 2.6 Aincorporates Shielded Gate technology. This process has been optimized for rDS(on),

 ..2. Size:717K  onsemi
 fdn86501lz.pdf

FDN86501LZ FDN86501LZ

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:270K  fairchild semi
 fdn86265p.pdf

FDN86501LZ FDN86501LZ

May 2014FDN86265PP-Channel PowerTrench MOSFET -150 V, -0.8 A, 1.2 Features General DescriptionThis P-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.2 at VGS = -10 V, ID = -0.8 ASemiconductors advanced PowerTrench process that has Max rDS(on) = 1.4 at VGS = -6 V, ID = -0.7 Abeen optimized for the on-state resistance and yet maintain superior switch

 9.2. Size:158K  fairchild semi
 fdn8601.pdf

FDN86501LZ FDN86501LZ

July 2010FDN8601N-Channel PowerTrench MOSFET 100 V, 2.7 A, 109 m Features General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 109 m at VGS = 10 V, ID = 1.5 ASemiconductors advanced Power Trench process that has Max rDS(on) = 175 m at VGS = 6 V, ID = 1.2 Abeen optimized for rDS(on), switching performance and ruggedness. High perform

 9.3. Size:157K  fairchild semi
 fdn86246.pdf

FDN86501LZ FDN86501LZ

December 2010FDN86246N-Channel PowerTrench MOSFET 150 V, 1.6 A, 261 m Features General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 261 m at VGS = 10 V, ID = 1.6 ASemiconductors advanced Power Trench process that has Max rDS(on) = 359 m at VGS = 6 V, ID = 1.4 Abeen optimized for rDS(on), switching performance and ruggedness. High pe

 9.4. Size:272K  onsemi
 fdn8601.pdf

FDN86501LZ FDN86501LZ

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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